Preparation and Electrochemical Performances of Nitrogen-doped Ultrananocrystalline Diamond Films

Xiaolan PENG,Jiaxiu ZOU,Haining LI,Bing WANG,Ying XIONG

DOI: https://doi.org/10.3969/j.issn.1671-8755.2017.03.013

2017-01-01

Abstract:Given the fact that high active energy of N2 as a doping source would result in the low doping efficiency of nitrogen atoms in ultrananocrystalline diamond films,nitrogen-doped ultrananocrystalline dia-mond (N-UNCD)films were deposited on Si substrates via microwave plasma chemical vapor deposition (MPCVD)technique,in which diethylamine was utilized as the sole nitrogen and carbon sources. Sur-face morphological,microstructural and composition characteristics of as-deposited N-UNCD films were in-vestigated with scanning electron microscopy (SEM),Raman spectrum and X-ray diffraction (XRD). As a novel electrochemical electrode,the electrochemical detection for biomolecule dopamine of N-UNCD films was carried out besides the electrochemical capacitance in diluted H2 SO4 solution. The obtained re-sults show that the as-prepared samples are typical N-UNCD films. The electrochemical double layer ca-pacitance of N-UNCD films could reach 42. 1 μF·cm-2 by cyclic voltammetry (CV)measurement and 32. 2 μF·cm-2 by chronoamperometry measurement. For the case of dopamine,the detection limit could approximate 0. 88 μM.