Low-Defect Nanodiamonds and Graphene Nanoribbons Enhanced Electron Field Emission Properties in Ultrananocrystalline Diamond Films

Chengke Chen,Binjie Tang,Hui Xu,Jinping Pan,Meiyan Jiang,Xiao Li,Xiaojun Hu
DOI: https://doi.org/10.1021/acsaelm.0c01111
IF: 4.494
2021-04-06
ACS Applied Electronic Materials
Abstract:It is known that the electron field emission (EFE) properties of ultrananocrystalline diamond (UNCD) films were usually produced by doping. Here, we performed a low-pressure annealing treatment without doping to promote the EFE properties of UNCD films. The results show that the 900–1000 °C annealed films exhibit superior EFE properties such as turn-on fields of 1.3 and 0.8 V/μm and corresponding EFE current densities of 7180 and 3180 μA/cm<sup>2</sup>, respectively. These EFE current densities are improved by ∼18 and 8 times compared to the unannealed UNCD films. The results show that larger diamond grains crack at subgrain boundaries into smaller ones with a low defect concentration, while <i>trans</i>-polyacetylene transforms to graphene nanoribbons to form a conductive network after high-temperature annealing, enhancing the EFE properties. We offer a low-cost and more convenient method to prepare UNCD films with superior EFE characteristics for applications in diamond-based cold cathode emission devices.This article has not yet been cited by other publications.
materials science, multidisciplinary,engineering, electrical & electronic
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