Effects of Ethylene doping on Deposition Rate and Surface Profile of Silicon Films

Zhu Jianqiang,Liu Yong,Wang Jing,Zhan Baohua,Song Chenlu,Han Gaorong
DOI: https://doi.org/10.3969/j.issn.1001-1625.2005.06.018
2005-01-01
Abstract:The amorphous silicon films were prepared by atmospheric pressure chemical vapor deposition (APCVD) on a moving substrate from a gas mixture of silane and ethylene at 620℃ . The surface profiles were investigated by the atomic force microscope (AFM) and the thickness of films were measured by scan cross- section with SEM. The results from FTIR show that the carbon was doped into the network of silicon. Effects of gas mole ratio of C2H4/SiH4 on the thickness of films were studied. With the increase of the ratio of C2H4/SiH4, the deposition rate is gradually decreased. The carbon doped in the amorphous silicon films can inhibit the growth of silicon particles.
What problem does this paper attempt to address?