The effect of surface treatment on the electrical properties of metal contacts to boron-doped homoepitaxial diamond film

S.A. Grot,G.S. Gildenblat,C.W. Hatfield,C.R. Wronski,A.R. Badzian,T. Badzian,R. Messier
DOI: https://doi.org/10.1109/55.46942
IF: 4.8157
1990-02-01
IEEE Electron Device Letters
Abstract:Both doped and undoped homoepitaxial diamond films were fabricated using microwave plasma-enhanced chemical vapor deposition (CVD). The conductivity of the diamond film is strongly affected by the surface treatment. In particular, exposure of film surface to a hydrogen plasma results in the formation of a conductive layer which can be used to obtain linear (ohmic) I-V characteristics of the Au/diamond contacts, regardless of the doping level. It is shown how the proper chemical cleaning of the boron-doped homoepitaxial diamond surface allows the fabrication of Au-gate Schottky diodes with excellent rectifying characteristics at temperatures of at least 400 degrees C.<>
engineering, electrical & electronic
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