Abstract:High-purity semi-insulating (HPSI) 4H silicon carbide (4H-SiC) single crystals are critical semiconductor materials for fabricating GaN-based high-frequency devices. One of the major challenges for the growth of HPSI 4H-SiC single crystals is the unintentional doping of nitrogen (N) and boron (B). The addition of hydrogen has been supposed to mitigate unintentional doping. However, the underlying mechanism has not been well understood. In this work, the role of hydrogen in the growth of HPSI 4H-SiC single crystals is investigated by first-principles formation-energy calculations. We find that the addition of hydrogen significantly mitigates N doping while hardly affecting B doping. Once hydrogen is added, hydrogen may adsorb at the growing surface of 4H-SiC, leading to surface passivation. Since N can react with hydrogen to form stable NH 3 (g), the chemical potential of N is reduced, so that the formation energy of N in 4H-SiC increases. Hence, the critical partial pressure of nitrogen required for the growth of HPSI 4H-SiC single crystals increases by two orders of magnitude. Moreover, we reveal that the adjustment of relative B and N doping concentrations has a substantial impact on the Fermi energy of HPSI 4H-SiC. When the doping concentration of N is higher than that of B, N interacts with carbon vacancies (V C ) to pin the Fermi energy at Z 1/2 . When the doping concentration of B is higher than that of N, the Fermi energy is pinned at EH6/7. This explains that the resistivity of unintentionally doped HPSI 4H-SiC may vary.

Effect of hydrogen treatment on 4H-SiC Schottky barrier diodes

Effects of Hydrogen on the Schottky Barrier of Ti/n-GaAs Diodes

Effects of Hydrogen on Al/p-Si Schottky Barrier Diodes

Effects of Hydrogen on Er/p-type Si Schottky-barrier Diodes.

Assessing the Effect of Hydrogen on the Electronic Properties of 4H-Sic

Gamma Irradiation and Annealing Effects on 4H-Sic Schottky Barrier Diode

Investigation of the synergistic effects on 4H-SiC junction barrier Schottky Diodes after multiple irradiation

Controlling of Schottky Barrier Heights for Au/n-GaAs and Ti/n-GaAs with Hydrogen Introduced after Metal Deposition by Bias Annealing

High-Dose Electron Radiation and Unexpected Room-Temperature Self-Healing of Epitaxial SiC Schottky Barrier Diodes

Large Current Ni/4H-SiC SBDs with Field Plate and Implantation Edge Termination Technology

Defect Influence on the Electrical Properties of 4H-SiC Schottky Diodes

Study on Junction Termination Etching Techniques for 4H-SiC Schottky Barrier Diode

Characterization of Ion-Implanted 4H-Sic Schottky Barrier Diodes

Quasi-Vertical GaN-on-Silicon Schottky Barrier Diode Terminated With Hydrogen Modulated In-Situ pn Junction

High-Performance 4H-Sic Junction Barrier Schottky Diodes with Double Resistive Termination Extensions

Study on the Hydrogen Effect and Interface/Border Traps of a Depletion-Mode AlGaN/GaN High-Electron-Mobility Transistor with a SiNx Gate Dielectric at Different Temperatures

Effect of hydrogen on the unintentional doping of 4H silicon carbide

Investigation of 4H-Sic Schottky Barrier Diodes Irradiated with 6 MeV Au Ions at Low Temperature

Recovery at room temperature annealing on 4H–SiC SBDs by gamma irradiation

Effects of hydrogen irradiation on the electrical properties of dilute nitride GaAsN Schottky diodes

Multiple P-Type SiC Micro-Island As Junction Termination Extension for 4H-Sic Schottky Barrier Diode