Pt/GaN Schottky Barrier Height Lowering by Incorporated Hydrogen
Yoshihiro Irokawa,Akihiko Ohi,Toshihide Nabatame,Yasuo Koide
DOI: https://doi.org/10.1149/2162-8777/ad3959
IF: 2.2
2024-04-10
ECS Journal of Solid State Science and Technology
Abstract:Changes in the hydrogen-induced Schottky barrier height (Φ B ) of Pt/GaN rectifiers fabricated on free-standing GaN substrates were investigated using current–voltage, capacitance–voltage, impedance spectroscopy, and current–time measurements. Ambient hydrogen lowered the Φ B and reduced the resistance of the semiconductor space–charge region while only weakly affecting the ideality factor, carrier concentration, and capacitance of the semiconductor space–charge region. The changes in the Φ B were reversible; specifically, the decrease in Φ B upon hydrogen exposure occurred quickly, but the recovery was slow. The results also showed that exposure to dry air and/or the application of a reverse bias to the Schottky electrodes accelerated the reversion compared with the case without the applied bias. The former case resulted in fast reversion because of the catalytic effect of Pt. The latter case, by contrast, suggested that hydrogen was incorporated into the Pt/GaN interface oxides as positive mobile charges. Moreover, both exposure to dry air and the application of a reverse bias increased the Φ B of an as-loaded sample from 0.91 to 1.07 eV, revealing that the Φ B of Pt/GaN rectifiers was kept lower as a result of hydrogen incorporation that likely occurred during device processing and/or storage.
materials science, multidisciplinary,physics, applied