Abstract:To explore the role of hydrogen in radiation degradation of AlGaN/GaN high-electron-mobility transistors (HEMTs), the performance degradation of the hydrogen untreated and pretreated devices is compared under the exposure of carbon ions. The energy of carbon ions is chosen as 7.6 MeV, and the maximum fluence reaches 4 x 10(12) cm(-2). By electrical character measuring, it is found that the positive shift of the threshold voltage and the decrease of the transconductance occur after to the irradiation. Hydrogen pretreatment accelerates the shift of threshold voltage and the decrease of the transconductance. The threshold voltage of the device is almost unchanged under 1-MeV electron irradiations. This means that the displacement damage leads to the shift of the threshold voltage. The height of Schottky barrier hardly changes in the hydrogen pretreated devices, showing that the ionization defects such as the formation of interface states under the gate are not the main cause of device degradation. Deep level transient spectrum (DLTS) results show that the irradiations cause the increase of gallium vacancies, and the hydrogen pretreatment inhibits its formation. According to the first principle calculation, the existence of hydrogen in GaN layer can reduce the formation energy of and the number of charges of the defects. It is speculated that hydrogen atoms participate in the evolution of radiation defects, which changes the types and number of defects in the devices.

Negative Charge State of Hydrogen Species in N-Type Gaas

Effects of Hydrogen on the Schottky Barrier of Ti/n-GaAs Diodes

Controlling of Schottky Barrier Heights for Au/n-GaAs and Ti/n-GaAs with Hydrogen Introduced after Metal Deposition by Bias Annealing

Effect of Reverse-Bias Annealing and Zero-Bias Annealing on a Hydrogen-Containing Au/(n-type GaAs) Schottky Barrier.

Effect of Hydrogen Poisoning on P-Gate AlGaN/GaN HEMTs

Study on the Hydrogen Effect and Interface/Border Traps of a Depletion-Mode AlGaN/GaN High-Electron-Mobility Transistor with a SiNx Gate Dielectric at Different Temperatures

Pt/GaN Schottky Barrier Height Lowering by Incorporated Hydrogen

Controlling the Schottky-Barrier Height of Ti/N-Gaas Schottky Diode Containing Hydrogen by Biased Annealing

Hydrogen Induced Positive Charge Generation in Gate Oxides

Effects of Hydrogen on Positive Charges in Gate Oxides

Possibility of Doping CuGaSe2 N -Type by Hydrogen

Effect of Hydrogen on Radiation-Induced Displacement Damage in AlGaN/GaN HEMTs

Formation of the thermal donors in the hydrogen-implanted nitrogen-doped silicon crystal

Effects of Hydrogen on Al/p-Si Schottky Barrier Diodes

Impact of Hydrogen in Ga‐doped Silicon on Maximum LeTID Defect Density

Hydrogen Induced and Plasma Charging Enhanced Positive Charge Generation in Gate Oxides

High density polarization-induced 2D hole gas enabled by elevating Al composition in GaN/AlGaN heterostructures

CONTROLLING Au/n-Si SCHOTTKY BARRIER CONTAI-NING HYDROGEN BY ZERO BIAS ANNEALING AND REVERSE BIAS ANNEALING

Effects of Hydrogen on Er/p-type Si Schottky-barrier Diodes.

Bias Temperature Stress Induced Hydrogen Depassivation from Al2O3/InGaAs Interface Defects

Hydrogen induced positive charge in Hf-based dielectrics