Abstract:After exposure to hydrogen plasma and chemical etching to remove layers of different thicknesses, n-type GaAs wafers with (100) and (110) orientation were deposited with Au to form Au/(n-GaAs) Schottky barriers (SB's). After zero-bias annealing (ZBA), the Schottky barrier height (SBH) of the Au/(n-GaAs) SB's containing hydrogen falls; after reverse-bias annealing (RBA), the SBH rises; and the SBH is reversible within experimental precision in at least three ZBA-RBA processes. Furthermore, the control effect of zero-bias annealing and reverse-bias annealing on the Schottky barrier height depends quantitatively on the orientation of the GaAs wafer and the thickness of the layer removed by chemical etching before deposition of Au. But the Schottky-barrier height of a control Schottky-barrier that is not subject to hydrogen exposure changes little during zero-bias annealing or reverse-bias annealing processes. It is also found that besides the SBH the effective Richardson coefficient of the SB containing hydrogen has a one-to-one correlation with the reverse bias of the RBA (100 degrees C, 2 h). Experiments strongly support the fact that the hydrogen contained in the SB is essential for the above ZBA-RBA effect. We have suggested a physical model to explain why hydrogen can reduce the Schottky-barrier heights and result in the ZBA-RBA effect of Au/(n-GaAs) Schottky barriers.

Control of Au/n-Si Schottky barrier containing hydrogen by means of zero bias annealing and reverse bias annealing

CONTROLLING Au/n-Si SCHOTTKY BARRIER CONTAI-NING HYDROGEN BY ZERO BIAS ANNEALING AND REVERSE BIAS ANNEALING

Effect Of Bias Annealing On Au/N-Si Schottky-Barrier With Hydrogen Incorporation

Effect of Reverse-Bias Annealing and Zero-Bias Annealing on a Hydrogen-Containing Au/(n-type GaAs) Schottky Barrier.

Controlling of Schottky Barrier Heights for Au/n-GaAs and Ti/n-GaAs with Hydrogen Introduced after Metal Deposition by Bias Annealing

Controlling the Schottky-Barrier Height of Ti/N-Gaas Schottky Diode Containing Hydrogen by Biased Annealing

Effects of Hydrogen on the Schottky Barrier of Ti/n-GaAs Diodes

Studies of defect states in the interface between SiO2 and a-Si:H films

Effects of Hydrogen on Al/p-Si Schottky Barrier Diodes

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Effects of Hydrogen on Er/p-type Si Schottky-barrier Diodes.

High-Pressure Water-Vapor Annealing for Enhancement of A-Si:H Film Passivation of Silicon Surface

Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing

Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing.

Effect of hydrogen treatment on 4H-SiC Schottky barrier diodes

Pt/GaN Schottky Barrier Height Lowering by Incorporated Hydrogen

Effect of Hydrogen Radical Exposure on the Interfacial and Bulk Structure of A-Si:H/a-sinx:h Multilayer Films

Negative Charge State of Hydrogen Species in N-Type Gaas

Schottky barrier height tuning of silicides on p-type Si (100) by aluminum implantation and pulsed excimer laser anneal

Schottky Barrier Height Tuning Via The Dopant Segregation Technique Through Low-Temperature Microwave Annealing

Effects of hydrogen plasma annealing on the luminescence from a-Si:H/SiO2 and nc-Si/SiO2 multilayers