Abstract:As a common impurity in 4H silicon carbide (4H-SiC), hydrogen (H) may play a role in tuning the electronic properties of 4H-SiC. In this work, we systemically explore the effect of H on the electronic properties of both n-type and p-type 4H-SiC. The passivation of H on intrinsic defects such as carbon vacancies (V-C) and silicon vacancies (V-Si) in 4H-SiC is also evaluated. We find that interstitial H at the bonding center of the Si-C bond (H-i(bc)) and interstitial H at the tetrahedral center of Si (H-i(Si-te)) dominate the defect configurations of H in p-type and n-type 4H-SiC, respectively. In n-type 4H-SiC, the compensation of H-i(Si-te) is found to pin the Fermi energy and hinder the increase of the electron concentration for highly N-doped 4H-SiC. The compensation of H-i(bc) is negligible compared to that of V-C on the p-type doping of Al-doped 4H-SiC. We further examine whether H can passivate V-C and improve the carrier lifetime in 4H-SiC. It turns out that nonequilibrium passivation of V-C by H is effective to eliminate the defect states of V-C, which enhances the carrier lifetime of moderately doped 4H-SiC. Regarding the quantum-qubit applications of 4H-SiC, we find that H can readily passivate V-Si during the creation of V-Si centers. Thermal annealing is needed to decompose the resulting V-Si-nH (n = 1-4) complexes and promote the uniformity of the photoluminescence of V-Si arrays in 4H-SiC. The current work may inspire the impurity engineering of H in 4H-SiC.

Effect Of Bias Annealing On Au/N-Si Schottky-Barrier With Hydrogen Incorporation

Control of Au/n-Si Schottky barrier containing hydrogen by means of zero bias annealing and reverse bias annealing

Effect of Reverse-Bias Annealing and Zero-Bias Annealing on a Hydrogen-Containing Au/(n-type GaAs) Schottky Barrier.

CONTROLLING Au/n-Si SCHOTTKY BARRIER CONTAI-NING HYDROGEN BY ZERO BIAS ANNEALING AND REVERSE BIAS ANNEALING

Controlling of Schottky Barrier Heights for Au/n-GaAs and Ti/n-GaAs with Hydrogen Introduced after Metal Deposition by Bias Annealing

Controlling the Schottky-Barrier Height of Ti/N-Gaas Schottky Diode Containing Hydrogen by Biased Annealing

Effects of Hydrogen on the Schottky Barrier of Ti/n-GaAs Diodes

Studies of defect states in the interface between SiO2 and a-Si:H films

Effects of Hydrogen on Al/p-Si Schottky Barrier Diodes

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Bias Temperature Stress Induced Hydrogen Depassivation from Al2O3/InGaAs Interface Defects

Pt/GaN Schottky Barrier Height Lowering by Incorporated Hydrogen

Effects of Hydrogen on Er/p-type Si Schottky-barrier Diodes.

Effect of annealing on the electrical performance of N-polarity GaN Schottky barrier diodes

Effect of hydrogen treatment on 4H-SiC Schottky barrier diodes

Voltage dependence of effective barrier height reduction in inhomogeneous Schottky diodes

The Effect Of Annealing Temperature On Electrical Properties Of Au/N-Gasb Schottky Contacts

Assessing the Effect of Hydrogen on the Electronic Properties of 4H-Sic

Annealing Temperature Influence on the Degree of Inhomogeneity of the Schottky Barrier in Ti/4h-Sic Contacts

Performance Comparison of Pt/Au and Ni/Au Schottky Contacts on Alxga1-X N/Gan Heterostructures at High Temperatures

Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing