Abstract:Crystalline silicon solar cells are always moving towards "high efficiency and low cost", which requires continuously improving the quality of crystalline silicon materials. Nevertheless, crystalline silicon materials typically contain various kinds of impurities and defects, which act as carrier recombination centers. Therefore these impurities and defects must be well controlled during the solar cell fabrication processes to improve the cell efficiency. Hydrogenation of crystalline silicon is one important method to deactivate these impurities and defects, which is so-called "hydrogenation engineering" in this paper. Hydrogen is widely reported to be able to passivate diverse defects like crystallographic defects, metallic impurities, boron-oxygen related defects and etc, but the effectiveness of hydrogen passivation depends strongly on the processing conditions. Moreover, in this decade, advanced hydrogenation technique has been developed and widely applied in the photovoltaic industry to significantly improve the performance of silicon solar cells. As the research on hydrogenation study has made a significant progress, it is the right time to write a review paper on introducing the state-of-the-art hydrogenation study and its applications in photovoltaic industry. The paper first introduces the fundamental properties of hydrogen in crystalline silicon and then discusses the applications of hydrogen on deactivating/inducing typical defects (e.g. dislocations, grain boundaries, various metallic impurities, boron-oxygen related defects and LeTID) in p- and n-type crystalline silicon, respectively. At last, the benefits of hydrogenation engineering on the next-generation silicon solar cells (e.g. TOPCon and HJT solar cells) are discussed. Overall, it was found that hydrogen can deactivate most of typical defects (sometimes induce defect) in n- and p-type crystalline silicon, leading to a significant efficiency enhancement in PERC, TOPCon and HJT solar cells. In conclusion, the paper aims to assist young researchers to better understand hydrogenation research and shed light on the future development of hydrogenation study.

Hydrogenation of Interface States at A Clean Grain Boundary in the Direct Silicon Bonded Wafer

Hydrogen passivation of Fe-related deep energy levels at a direct silicon-bonded (110)/(100) grain boundary

Electrical Properties of the Bonding Interface in a (110)/(100) Direct-Silicon-Bonded (DSB) Wafer

Electron-beam-induced current study of hydrogen passivation on grain boundaries in multicrystalline silicon: Influence of GB character and impurity contamination

Bonded Hydrogen in Nanocrystalline Silicon Photovoltaic Materials: Impact on Structure and Defect Density

Investigation on the Impact of Hydrogen on the Passivation of Silicon Surface States in Clean and Copper Contaminated Conditions

Capacitance Transient and Current-/Capacitance-voltage Study of Direct Silicon Bonded (110)∕(100) Interface

Modulation of Electrical Characteristics at a Ni-contaminated Silicon Grain Boundary by Engineering the Metal Precipitates

Assessing the Effect of Hydrogen on the Electronic Properties of 4H-Sic

Effect of Small‐Angle Grain Boundary on the Mechanical Properties in Direct Silicon Bonded Wafer

High-Pressure Water-Vapor Annealing for Enhancement of A-Si:H Film Passivation of Silicon Surface

Impact of Cu Contamination on the Electrical Properties of A Direct Silicon Bonded (110)/(100) Interfacial Grain Boundary

First-principles Investigation of Grain Boundary Structure Effects on Hydrogen Solubility and Segregation in Tungsten

Grain Boundary Engineering of High Performance Multicrystalline Silicon: Control of Iron Contamination at the Ingot Edge

Hydrogenated Grain Boundaries Control the Strength and Ductility of Polycrystalline Graphene

Improved Interface Microstructure Between Crystalline Silicon and Nanocrystalline Silicon Oxide Window Layer of Silicon Heterojunction Solar Cells

Deep-level Transient Spectroscopy Study on Direct Silicon Bonded (1 1 0)/(1 0 0) Interfacial Grain Boundary

Effects of Hydrogen on Al/p-Si Schottky Barrier Diodes

Deep-Level Transient Spectroscopy Study On Direct Silicon Bonded (110)/(100) Interfacial Grain Boundary

Progress of hydrogenation engineering in crystalline silicon solar cells: a review

Enhancement of Electrical Properties of Nanostructured Polysilicon Layers Through Hydrogen Passivation