Abstract:Crystalline silicon solar cells are always moving towards "high efficiency and low cost", which requires continuously improving the quality of crystalline silicon materials. Nevertheless, crystalline silicon materials typically contain various kinds of impurities and defects, which act as carrier recombination centers. Therefore these impurities and defects must be well controlled during the solar cell fabrication processes to improve the cell efficiency. Hydrogenation of crystalline silicon is one important method to deactivate these impurities and defects, which is so-called "hydrogenation engineering" in this paper. Hydrogen is widely reported to be able to passivate diverse defects like crystallographic defects, metallic impurities, boron-oxygen related defects and etc, but the effectiveness of hydrogen passivation depends strongly on the processing conditions. Moreover, in this decade, advanced hydrogenation technique has been developed and widely applied in the photovoltaic industry to significantly improve the performance of silicon solar cells. As the research on hydrogenation study has made a significant progress, it is the right time to write a review paper on introducing the state-of-the-art hydrogenation study and its applications in photovoltaic industry. The paper first introduces the fundamental properties of hydrogen in crystalline silicon and then discusses the applications of hydrogen on deactivating/inducing typical defects (e.g. dislocations, grain boundaries, various metallic impurities, boron-oxygen related defects and LeTID) in p- and n-type crystalline silicon, respectively. At last, the benefits of hydrogenation engineering on the next-generation silicon solar cells (e.g. TOPCon and HJT solar cells) are discussed. Overall, it was found that hydrogen can deactivate most of typical defects (sometimes induce defect) in n- and p-type crystalline silicon, leading to a significant efficiency enhancement in PERC, TOPCon and HJT solar cells. In conclusion, the paper aims to assist young researchers to better understand hydrogenation research and shed light on the future development of hydrogenation study.

Investigation on the Impact of Hydrogen on the Passivation of Silicon Surface States in Clean and Copper Contaminated Conditions

Characterization of Silicon Surface States at Clean and Copper Contaminated Condition Via Transient Capacitance Measurement

Assessing the Effect of Hydrogen on the Electronic Properties of 4H-Sic

Electron-beam-induced current study of hydrogen passivation on grain boundaries in multicrystalline silicon: Influence of GB character and impurity contamination

Hydrogenation of Interface States at A Clean Grain Boundary in the Direct Silicon Bonded Wafer

Role of Hydrogen Plasma Pretreatment in Improving Passivation of the Silicon Surface for Solar Cells Applications

High-Pressure Water-Vapor Annealing for Enhancement of A-Si:H Film Passivation of Silicon Surface

Dry Passivation Process for Silicon Heterojunction Solar Cells Using Hydrogen Plasma Treatment Followed by In Situ a-Si:H Deposition

Bulk Defects and Hydrogenation Kinetics in Crystalline Silicon Solar Cells With Fired Passivating Contacts

Origin of hydrogen passivation in 4 H -SiC

Defect States in Hydrogenated Amorphous Silicon-Sulphur Alloys by ESR and PAS

Progress of hydrogenation engineering in crystalline silicon solar cells: a review

Enhancement of C-Si Surface Passivation Quality by Increasing in Situ H2 Flow Rate

Passivation Effect of Hydrogen and Oxygen on the Carrier Capture of Vacancies in 4H-Sic

Amorphous/Crystalline Silicon Interface Stability: Correlation between Infrared Spectroscopy and Electronic Passivation Properties

Optimum Hydrogen Injection in Phosphorus-Doped Polysilicon Passivating Contacts

Hydrogen passivation of Fe-related deep energy levels at a direct silicon-bonded (110)/(100) grain boundary

Investigation of positive roles of hydrogen plasma treatment for interface passivation based on silicon heterojunction solar cells

From Jekyll to Hyde and Beyond: Hydrogen's Multifaceted Role in Passivation, H-Induced Breakdown, and Charging of Amorphous Silicon Nitride

On the passivation mechanism of poly-silicon and thin silicon oxide on crystal silicon wafers