Abstract:Defect size distributions in nitrogen-doped Czochralski (N-CZ) silicon wafers were obtained using an oxygen precipitate profiler and Wright-Jenkins etching. These showed unique depth dependence in low-high and high-low-high cycled N-CZ wafers. Unique phenomena observed include a high defect concentration at the subsurface that decreases within the top 2μm of the so-called denuded zone. In contrast to N-free CZ Si for which the first high step annealing dissolves the grown-in defects, these appeared to be stable in N-CZ Si. As a result, the defect size distribution in the bulk was found to be independent of the annealing cycle. It was also found that the depth dependent defect concentration correlates well with oxygen and strongly with nitrogen secondary ion mass spectroscopy profiles, suggesting that nitrogen is the leading impurity in the defect formation processes even though introduced at very low concentration. Nitrogen appeared to effectively modify the nucleation regime by a drastic increase of the nuclei density. At low temperature under external stress, nitrogen and oxygen cosegregate to the surface where the stress is applied; such a phenomenon is largely increased at high temperature.

Recent Research on Hydrogen Behavior in Czochralski Silicon

Influence of Grown-in Hydrogen on Thermal Donor Formation and Oxygen Precipitation in Czochralski Silicon Crystals

The Advance of Research on Oxygen Precipitates in NCZ Silicon

Effect of Hydrogen Annealing on Voids in arge-Diameter Czochralski Silicon

Effect Of Nitrogen Doping On The Dissolution Of Oxygen Precipitates In Czochralski Silicon During Rapid Thermal Annealing

Enhanced Oxygen Diffusion in Czochralski Silicon at 450–650 °C

Germanium in Czochralski Silicon

Nitrogen Effect on Hydrogen Penetration into Cz Si During Wet Chemical Etching

Hydrogen Annealing of Grown-In Voids in Nitrogen-Doped Czochralski Grown Silicon

Immobilization of Dislocations by Oxygen Precipitates in Czochralski Silicon: Feasibility of Precipitation Strengthening Mechanism

Effect of Hydrogen Anneal on Electric Behavior in NCZ Silicon

Enhancement of Oxygen Precipitation in Czochralski Silicon Wafers by High-Temperature Anneals

Correlation Between Oxygen Precipitation and Extended Defects in Czochralski Silicon: Investigation by Means of Scanning Infrared Microscopy

Study of nitrogen-related defects by means of gold and hydrogen diffusion investigations

Effects of Annealing Atmosphere on Bulk Micro-Defects in Czochralski Silicon Wafer

The Annealing Behavior of Oxygen in Cast Multicrystalline Silicon

Effect of oxygen precipitates on dislocation motion in Czochralski silicon

Effect of Vacancies on Oxygen Precipitation in Germanium-Doped Czochralski Silicon

Oxygen Precipitation in Nitrogen Doped Czochralski Silicon Wafers. I. Formation Mechanisms of Near-Surface and Bulk Defects

Transmission Electron Microscopy Investigation of the Micro-Defects in Czochralski Silicon

Oxygen Precipitation in Heavily Phosphorus-Doped Czochralski Silicon: Effect of Nitrogen Codoping