Abstract:For nitrogen-doped Czochralski (NCZ) silicon, it is well known that nitrogen (N) and oxygen (O) impurities can interact to form nitrogen–oxygen shallow thermal donors (N–O STDs); moreover, the N impurities can be involved into heterogeneous nucleation to facilitate the formation of grown-in oxide precipitates. However, how the N impurities participate in the growth of grown-in oxide precipitates during the post-anneal remains unclear. Besides, the correlation between the formation of N–O STDs and the growth of grown-in oxide precipitates is yet to be revealed. In this work, the effects of pre-anneals at temperatures of 900–1200 °C on the formation of N–O STDs at 650 °C in NCZ silicon have been first investigated. Thus, it has been found that the more significant growth of grown-in oxide precipitates during the pre-anneal, which consumes much more N impurities, leads to forming much fewer N–O STDs. This finding stimulates us to explore the mechanism for the participation of N impurities in the growth of grown-in oxide precipitates. To this end, the capture of N impurities by the oxide precipitates, on the one hand, and the release of N impurities from the oxide precipitates, on the other hand, have been investigated by two systematically constructed experiments. The obtained results enable us to reasonably propose that the N impurities participating in the growth of grown-in oxide precipitates predominately reside at the oxide precipitate/Si interfaces, which reduces the interfacial energies, thus favoring the growth of grown-in oxide precipitates. Such a viewpoint is well supported by the density functional theory calculations. In a word, this work has gained an insight into the mechanism for the participation of N impurities in the growth of grown-in oxide precipitates, starting from exploring the correlation between the formation of N–O STDs and the growth of grown-in oxide precipitates.

Influence of Grown-in Hydrogen on Thermal Donor Formation and Oxygen Precipitation in Czochralski Silicon Crystals

Formation of the thermal donors in the hydrogen-implanted nitrogen-doped silicon crystal

Recent Research on Hydrogen Behavior in Czochralski Silicon

Formation of Nitrogen-Oxygen Donors in N-doped Czochralski-silicon Crystal

Grown-In Defects in Heavily Boron-Doped Czochralski Silicon

Grown-In Oxygen Precipitates in Czochralski Silicon Investigated by Transmission Electron Microscopy

Participation of Nitrogen Impurities in the Growth of Grown-in Oxide Precipitates in Nitrogen-Doped Czochralski Silicon

Enhanced Oxygen Precipitation In Neutron-Irradiated Nitrogen-Doped Czochralski Silicon Crystal

Hydrogen Annealing of Grown-In Voids in Nitrogen-Doped Czochralski Grown Silicon

Effect Of Nitrogen Doping On The Dissolution Of Oxygen Precipitates In Czochralski Silicon During Rapid Thermal Annealing

Thermal History Effect on the Nucleation of Oxygen Precipitates in Germanium Doped Cz-silicon Studied by High-Energy X-ray Diffraction

Oxygen Precipitation in Nitrogen Doped Czochralski Silicon Wafers. I. Formation Mechanisms of Near-Surface and Bulk Defects

Oxygen Precipitation in Heavily Phosphorus-doped Czochralski Silicon

Grown-in Defects in Heavily Phosphorus-Doped Czochralski Silicon

Mechanism behind the Crack Formation in Hydrogen Doping Cz-Si Crystal Growth

Oxygen precipitation in nitrogen-doped Czochralski-grown silicon crystals

Oxygen Precipitation in Ge-doped Czochralski-silicon at 900 °C Investigated by in Situ High Energy X-Ray Diffraction

Oxygen Precipitation in Heavily Phosphorus-Doped Czochralski Silicon: Effect of Nitrogen Codoping

Enhancement of Oxygen Precipitation in Czochralski Silicon Wafers by High-Temperature Anneals

Influence of Nickel Precipitation on the Formation of Denuded Zone in Czochralski Silicon

Study of nitrogen-related defects by means of gold and hydrogen diffusion investigations