From Jekyll to Hyde and Beyond: Hydrogen's Multifaceted Role in Passivation, H-Induced Breakdown, and Charging of Amorphous Silicon Nitride

Jonathon Cottom,Lukas Hückmann,Emilia Olsson,Jörg Meyer,Lukas Hückmann,Jörg Meyer

DOI: https://doi.org/10.1021/acs.jpclett.3c03376

IF: 6.888

2024-01-19

The Journal of Physical Chemistry Letters

Abstract:In semiconductor devices, hydrogen has traditionally been viewed as a panacea for defects, being adept at neutralizing dangling bonds and consequently purging the related states from the band gap. With amorphous silicon nitride (a-Si(3)N(4))─a material critical for electronic, optical, and mechanical applications─this belief holds true as hydrogen passivates both silicon and nitrogen dangling bonds. However, there is more to the story. Our density functional theory calculations unveil hydrogen's...

chemistry, physical,physics, atomic, molecular & chemical,nanoscience & nanotechnology,materials science, multidisciplinary

What problem does this paper attempt to address?

The paper primarily explores the multifaceted role of hydrogen (H) in amorphous silicon nitride (a-Si3N4). Specifically, the study reveals the following points through Density Functional Theory (DFT) calculations:

1. **Traditional View**: Hydrogen is typically seen as an effective means to neutralize dangling bonds, thereby clearing the related states within the bandgap, which is beneficial for semiconductor devices.

2. **Dual Role of Hydrogen**:
- **"Jekyll" Aspect**: Hydrogen atoms can indeed repair coordination defects in the amorphous silicon nitride network.
- **"Hyde" Aspect**: However, in certain cases, hydrogen can induce Si-N bond breakage, especially in strained regions of the amorphous network.

3. **Balance with Intrinsic Charge Traps**: The study also reveals a complex balance between hydrogen defect centers and the pre-existing intrinsic charge traps in amorphous silicon nitride. The additional charge provided by hydrogen atoms leads to the charging of the amorphous silicon nitride insulator.

4. **Complex Behavior of Hydrogen**: Most hydrogen-related states are located within the valence and conduction bands, making them electronically inert. Charge capture is mainly associated with intrinsic traps, which are related to nitrogen centers (or two-coordinated nitrogen) in NH and SiH defects.

5. **Experimental Observations**: Experiments have observed that with an increase in hydrogen concentration in amorphous silicon nitride films, the temperature stability of the films decreases.

6. **Comparison with Oxide Systems**: Although there are some similarities in the behavior of hydrogen in silicon oxide systems, the study shows that hydrogen's behavior in amorphous silicon nitride is more complex, including differences such as the mechanism of promoting strained bond breakage.

In summary, this study aims to comprehensively understand the role of hydrogen in amorphous silicon nitride and its impact on the material properties.