Abstract:Hydrogen, introduced into crystalline (c-) or amorphous (a-) silicon (Si), plays an important role in improving Si properties for photovoltaics application. Low temperature proton implantation in c-Si and a-Si or H-doping of Si films introduces metastable hydrogen in the bond-centered-position (BCH), which dissociates with increasing temperatures into new metastable complexes. Using ab-initio molecular dynamics we report on the stability of BCH, a convenient hydrogen model system, in crystalline Si and its temperature-induced dissociation products in a wide temperature range, which includes temperatures close to solar cell operating conditions. Particular attention was paid to the newly experimentally discovered H2** dimer, and the H2* dimer, as well as isolated interstitial hydrogen and monohydrides. Each complex leaves a characteristic signature in the frequency spectrum, the density of states (DOS) and in the imaginary part of the dielectric constant that agrees well with experiments. All complexes modify the vicinity of the energy gap of pure c-Si. BCH introduces characteristic donor levels, causing a strong peak in the DOS just below the intrinsic conduction band. The Fermi energy is raised, filling these donor states with two electrons and causing a strong peak in the imaginary part of the dielectric constant in the infrared. The H2** and H2* dimers introduce a low energy tail in the imaginary part of the dielectric constant. The results are important for experimental in-situ optical characterization of Si film growth that often involves hydrogen.

The Interplay of Quantum Confinement and Hydrogenation in Amorphous Silicon Quantum Dots

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Semiconductor Quantum Dots: Synthesis, Properties and Applications

Quantum Anomalous/valley Hall Effect and Tunable Quantum State in Hydrogenated Arsenene Decorated with a Transition Metal

Silicon Quantum Dot Based Solar Cells: Addressing the Issues of Doping, Voltage and Current Transport

Controlling the Red Luminescence from Silicon Quantum Dots in Hydrogenated Amorphous Silicon Nitride Films

Optical Properties of Amorphous Silicon Quantum Dots(a-Si QDs) with various dot size using Extended Hückel Theory

Bonding properties of amorphous silicon and quantum confinement in the mixed phases of silicon nano slabs

Confined high-pressure chemical deposition of hydrogenated amorphous silicon

Silicon Quantum Dots: Water‐Dispersible Silicon‐Quantum‐Dot‐Containing Micelles Self‐Assembled from an Amphiphilic Polymer (part. Part. Syst. Charact. 7/2014)

Inorganic Quantum Dot Materials and Their Applications in “organic” Hybrid Solar Cells

A theoretical study of the electronic properties of hydrogenated spherical‐like SiC quantum dots with C ‐rich and Si ‐rich compositions

Low Temperature Radical Initiated Hydrosilylation of Silicon Quantum Dots.

Multi-band Silicon Quantum Dots Embedded in an Amorphous Matrix of Silicon Carbide

Theory of atomic scale quantum dots in silicon: dangling bond quantum dots on silicon surface

Fabrication of highly ordered nanocrystalline Si:H nanodots for the application of nanodevice arrays

From Jekyll to Hyde and Beyond: Hydrogen's Multifaceted Role in Passivation, H-Induced Breakdown, and Charging of Amorphous Silicon Nitride

Dynamical, Vibrational, Electronic and Optical Properties in c-Si:H with Bond-Centered-Hydrogen, H Dimers and Other H Complexes

Recent Advances in Quantum Dot Surface Chemistry

Control of Quantized Spontaneous Emission from Single GaAs Quantum Dots Embedded in Huygens' Metasurfaces

Experimental Study of the Influence of CH and H on the Conformation, Chemical Composition, and Luminescence of Silicon Quantum Dots Inlaid in Silicon Carbide Thin Films Grown by Remote Plasma-Enhanced Chemical Vapor Deposition.