Abstract:Nanophase nc-Si/a-SiC films that contain Si quantum dots (QDs) embedded in an amorphous SiC matrix were deposited on single-crystal silicon substrates using inductively coupled plasma-assisted chemical vapor deposition from the reactive silane and methane precursor gases diluted with hydrogen at a substrate temperature of 200 degrees C. The effect of the hydrogen dilution ratio X (X is defined as the flow rate ratio of hydrogen-to-silane plus methane gases), ranging from 0 to 10.0, on the morphological, structural, and compositional properties of the deposited films, is extensively and systematically studied by scanning electron microscopy, high-resolution transmission electron microscopy, X-ray diffraction, Raman spectroscopy, Fourier-transform infrared absorption spectroscopy, and X-ray photoelectron spectroscopy. Effective nanophase segregation at a low hydrogen dilution ratio of 4.0 leads to the formation of highly uniform Si QDs embedded in the amorphous SiC matrix. It is also shown that with the increase of X, the crystallinity degree and the crystallite size increase while the carbon content and the growth rate decrease. The obtained experimental results are explained in terms of the effect of hydrogen dilution on the nucleation and growth processes of the Si QDs in the high-density plasmas. These results are highly relevant to the development of next-generation photovoltaic solar cells, light-emitting diodes, thin-film transistors, and other applications.

Fabrication of highly ordered nanocrystalline Si:H nanodots for the application of nanodevice arrays

Fabrication of nanocrystalline Si:H nanodot arrays with controllable porous alumina membranes

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Si Quantum Dots Embedded in an Amorphous SiC Matrix : Nanophase Control by Non-Equilibrium Plasma Hydrogenation

Two-dimensional patterned nc-Si arrays in nanometer thick a-Si:H single layer

Fabrication of Si Nanodot Arrays by Plasma Enhanced CVD Using Porous Alumina Templates

Towards Controllable Growth of Self-Assembled Sige Single and Double Quantum Dot Nanostructures

Advanced Optoelectronic Devices Based on Si Quantum Dots/Si Nanowires Hetero-structures

Single-step, Rapid Low-Temperature Synthesis of Si Quantum Dots Embedded in an Amorphous SiC Matrix in High-Density Reactive Plasmas

In-situ fabricated amorphous silicon quantum dots embedded in silicon nitride matrix: Photoluminescence control and electroluminescence device fabrication

Ordered silicon nanorod arrays with controllable geometry and robust hydrophobicity

Fabrication of Highly Ordered 2D Metallic Arrays with Disc-in-hole Binary Nanostructures Via a Newly Developed Nanosphere Lithography.

Large-scale Si<sub>1−<i>x</i></sub>Ge<sub><i>x</i></sub> quantum dot arrays fabricated by templated catalytic etching

High Density Si Nanodots-Fabrication and Properties

Aligned 1d Silicon Nanostructure Arrays by Plasma Etching

Fabricating Vertically Aligned Sub-20 Nm Si Nanowire Arrays by Chemical Etching and Thermal Oxidation

Mechanisms for directed self-assembly of heteroepitaxial Ge/Si quantum dots with deterministic placement and sub-23nm spacing on SiC nanotemplates

Fabrication and Properties of Large-Area Silicon Nanowire Arrays

Fabrication and Characterization of the Size-Controlled and Patterned Nc-Si Dots

Size-controlled Nc-Si:H/a-sic:h Quantum Dots Superlattice and Its Application to Hydrogenated Amorphous Silicon Solar Cells

Designing Artificial 2D Crystals with Site and Size Controlled Quantum Dots