Abstract:Silicon is the second most abundant element in the Earth’s crust and could be considered an environmentally benign material. Silicon has been widely used in electronic devices and solar cells, and it has dominated the semiconductor research and development. However, the photoluminescence (PL) of the bulk material shows an invisible NIR wavelength ( λ ~ 1100 nm). In addition, the PL quantum yield (PLQY) of bulk crystal Si is ~0.01% owing to the indirect transition nature. In contrast, silicon quantum dots show PL in the entire visible spectral region [1]. Furthermore, colloidal silicon quantum dots demonstrate PLQYs of 60% [2], and thereby they give highly impact as environmentally benign and heavy-metal-free quantum dots (i.e., In, Cd, and Pb free) for displays, lighting, and biomedical imaging via solution processing. Indeed, silicon quantum dot LEDs have recently been produced from a natural substance, by upcycling discarded rice husks [3]. Herein, red PL with a PLQY of 60–80% and LEDs with an external quantum efficiency of >10% were obtained at 1/3600 th of the cost of existing methods. This was achieved by using trichlorosilane and an organic solvent to prepare a hydrogen silsesquioxane (HSQ) polymer, and by optimizing the LED optoelectric properties. Based on many silicon quantum dots synthesized in our study, each of them enabled us to quantitative the relationships HSQ polymer structure, PLQY, and LED efficiency, exhibiting the critical parameters that governed their performances. Moreover, the simple and cost-effective methods proposed here could prove invaluable for the synthesis and characterization of silicon quantum dots in the near future. References [1] Canham, L. Faraday Discuss. 2020, 222, 10–81; [2] Ono, T.; Xu, Y.; Sakata, T.; Saitow, K. I. ACS Appl. Mater. Interfaces 2022, 14, 1373–1388; [3] Terada, S.; Ueda, H.; Ono, T.; Saitow, K. ACS Sustainable Chem. Eng. 2022, 10, 1765–1776.

In-situ fabricated amorphous silicon quantum dots embedded in silicon nitride matrix: Photoluminescence control and electroluminescence device fabrication

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Silicon-quantum-dot Light-Emitting Diodes with Varying Emission Layer Thickness

Photoluminescences and Structrue Performances of Si-Rich Silicon Nitride Thin Films Containing Si Quantum Dots

Photoluminescence and Carrier Transport Mechanisms of Silicon-Rich Silicon Nitride Light Emitting Device

Electroluminescent Devices Based on Amorphous SiN/Si Quantum Dots/amorphous SiN Sandwiched Structures

Efficient silicon quantum dots light emitting diodes with an inverted device structure

Size-Dependent Electroluminescence From Si Quantum Dots Embedded In Amorphous Sic Matrix

Controlling the Red Luminescence from Silicon Quantum Dots in Hydrogenated Amorphous Silicon Nitride Films

Improved Electroluminescence from Silicon Nitride Light Emitting Devices by Localized Surface Plasmons

Fabrication and Luminescence Properties of Si Quantum Dots Based on Si-Rich Sinx/N-Rich Siny Multilayer

Enhanced Electroluminescence from Silicon Quantum Dots Embedded in Silicon Nitride Thin Films Coupled with Gold Nanoparticles in Light Emitting Devices

Electroluminescence of Silicon-Rich Silicon Nitride Light-Emitting Devices

Photoluminescence from Silicon Nanocrystals in Encapsulating Materials

Structural Evolution And Photoluminescence Of Annealed Si-Rich Nitride With Si Quantum Dots Prepared By Plasma Enhanced Chemical Vapor Deposition

Dual Management of Electrons and Photons to Get High‐Performance Light Emitting Devices Based on Si Nanowires and Si Quantum Dots with Al2O3‐Ag Hybrid Nanostructures

Advanced Optoelectronic Devices Based on Si Quantum Dots/Si Nanowires Hetero-structures

(Invited) Synthesis of Ultra-Bright Colloidal Silicon Quantum Dots (PLQY~80%) and Highly Efficient LEDs (EQE>10%)

Synthesis and Optical Properties of Si-Rich Nitride Containing Silicon Quantum Dots

Long Time Atmospheric Oxidation Followed by Hydrofluoric Etching and Hydrosilylation for High‐Efficiency Light‐Emitting Silicon Quantum Dots

Bright Luminescence in Amorphous Hydrogenated Silicon-Nitride Quantum-Dot Films Prepared by A Special Designed Pecvd System