Abstract:The study of carbon-based nanostructured materials is a highly active research field, that has made significant progress in the study of twodimensional materials and nanotechnology. The interest in these materials is mainly attributed to the fascinating properties they exhibit, as seen in the case of graphene as a 2D material, as well as emergence on numerous novel 2D materials and their heterostructures. Additionally, there is important interest in systems such as 2D quantum dots. Therefore, this work focuses on the systematic study of graphene quantum dots of various sizes, all within the framework of first-principles density functional theory. We started with the simplest graphene quantum dot (GQD) structure, benzene (C6H6), which consist of six carbon atoms passivated with hydrogen atoms. We then increased its size by adding more aromatic rings, resulting in the following GQD configurations: C24H12, C54H18, C96H24, C150H30 and C216H36. We report the density of states (DOS) and the imaginary part of the dielectric function (ε2) for the system, analyzing both the pristine configuration and the effect of both single and double (boron, nitrogen and silicon, denoted as Sa). The double substitutional atom study was done considering random, ortho-, meta-, and para-director positions just for the C94H24Sa2 GQD. In general, we can conclude that as the GQD increases in size, the HOMO-LUMO energy decreases. Furthermore, it is observed that boron and nitrogen exhibit their expected n-, and p-type doping characteristics, but this differs between single and double Sa substitutions. Additionally, the imaginary part of the dielectric function is highly sensitive to the positions of single and double substitutional atoms, as well as the polarization of incident light. Therefore, we suggest that these differences can be used to clearly determinate the type of substitutional atoms and their positions from optical measurements.

A theoretical study of the electronic properties of hydrogenated spherical‐like SiC quantum dots with C ‐rich and Si ‐rich compositions

Electronic Properties of Si and C Substitutional Defects and Porosity in C‐Rich and Si‐Rich Hydrogenated Roundish SiC Quantum Dots: An Ab‐Initio Study

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

A first-principles study of the electronic, vibrational, and optical properties of planar SiC quantum dots

The Surface Termination Effect on the Quantum Confinement and Electron Affinities of 3C-Sic Quantum Dots: A First-Principles Study

The Structures and Properties of Si/SiO2 Core/shell Quantum Dots Studied by Density-Functional Tight-Binding Calculations

Native surface oxidation yields SiC-SiO2 core-shell quantum dots with improved quantum efficiency

Effect of Elemental Composition and Size on Electron Confinement in Self-Assembled SiC Quantum Dots : a Combinatorial Approach

The theoretical DFT study of electronic structure of thin Si/SiO2 quantum nanodots and nanowires

Research Progress in Application of Silicon Quantum Dots in Optoelectronic Devices

Size dependent electronic properties of silicon quantum dots - an analysis with hybrid, screened hybrid and local density functional theory

Experimental Study of the Influence of CH and H on the Conformation, Chemical Composition, and Luminescence of Silicon Quantum Dots Inlaid in Silicon Carbide Thin Films Grown by Remote Plasma-Enhanced Chemical Vapor Deposition.

Electronic Correlations in Multielectron Silicon Quantum Dots

Tailoring the Interfacial Structure of Colloidal "giant" Quantum Dots for Optoelectronic Applications.

Optical Properties of Pure and Mixed Germanium and Silicon Quantum Dots

Core and Surface Electronic States and Phonon Modes in SiC Quantum Dots Studied by Optical Spectroscopy and Hybrid TDDFT

Electronic states and curved surface effect of silicon quantum dots

A Comprehensive Ab Initio Study of Electronic, Optical and Cohesive Properties of Silicon Quantum Dots of Various Morphologies and Sizes up to Infinity

Theory of atomic scale quantum dots in silicon: dangling bond quantum dots on silicon surface

DFT formalism studies on the structural and electronic properties of hexagonal graphene quantum dot with B, N and Si substitutional impurities

Si Quantum Dots Embedded in an Amorphous SiC Matrix : Nanophase Control by Non-Equilibrium Plasma Hydrogenation