Site-dependent properties of quantum emitters in nanostructured silicon carbide

Tamanna Joshi,Pratibha Dev

DOI: https://doi.org/10.1103/PRXQuantum.3.020325

2021-09-17

Abstract:Deep defects in silicon carbide (SiC) possess atom-like electronic, spin and optical properties, making them ideal for quantum-computing and -sensing applications. In these applications, deep defects are often placed within fabricated nanostructures that modify defect properties due to surface and quantum confinement effects. Thus far, theoretical studies exploring deep defects in SiC have ignored these effects. Using density functional theory, this work demonstrates site-dependence of properties of bright, negatively-charged silicon monovacancies within a SiC nanowire. It is shown that the optical properties of defects depend strongly on the hybridization of the defect states with the surface states and on the structural changes allowed by proximity to the surfaces. Additionally, the analysis of the first principles results indicates that the charge-state conversion and/or migration to thermodynamically-favorable undercoordinated surface sites can deteriorate deep-defect properties. These results illustrate the importance of considering how finite-size effects tune defect properties, and of creating mitigating protocols to ensure a defect's charge-state stability within nanostructured hosts.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: in nanostructured silicon carbide (SiC), how are the properties of deep defects affected by surface effects and quantum confinement effects? Specifically, the author studied how the properties of negatively charged silicon single vacancies (V\(_{\text{Si}}^{-1}\)) in 2H - SiC nanowires change with their different positions through density functional theory (DFT). These properties include structural properties, electronic properties, spin properties and optical properties.

The paper points out that in quantum computing and quantum sensing applications, deep defects are often placed inside fabricated nanostructures, and these nanostructures will change the properties of the defects due to surface effects and quantum confinement effects. However, most of the previous theoretical studies have ignored these effects. Therefore, the research in this paper fills this gap, revealing the property differences of negatively charged silicon single vacancies at different positions (such as inside, surface four - fold coordination sites and surface three - fold coordination sites), especially the influence of these differences on optical signals. It is found that defects close to the surface may undergo charge - state conversion or migrate to thermodynamically more favorable low - coordination surface sites, which will lead to the deterioration of the properties of deep defects. These results emphasize the importance of considering the influence of finite - size effects on defect properties and propose strategies to ensure the stability of defect charge states through different surface passivation schemes.