Abstract:Superconductor based quantum computing has the major drawback of working temperatures which require liquid helium for cooling. A promising approach to overcome this obstacle for quantum technologies is based on deep level defects in semiconductors, with the nitrogen vacancy (NV) center in diamond being the most prominent example. Unfortunately, diamond in sufficient quality is scarce, which motivated efforts to find similar defects in silicon carbide (SiC). So far, many reports focus on investigations of point defects in irradiated 3C-SiC and as grown material. However, the investigated defects are more or less a product of coincidence for both. While in irradiated material the intentional generation of specific defects is rather challenging, in as purchased material the defects are actually more an unintentional by product of growth and process conditions. This work proposes a new route: the incorporation and control of deep level defects in 3C-SiC by epitaxial sublimation growth. The observed defects in the near infrared show bright luminescence in the 175 K/200 K regime and remain excitable up to 300 K. This could enable working temperatures above the cryogenic limit. The joint origin of all detected defects is assigned to the carbon vacancy.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: how to achieve the controllable introduction and regulation of deep - level defects in cubic silicon carbide (3C - SiC), especially during its sublimation growth process. Specifically, the researchers hope: 1. **Overcome the low - temperature limitation in superconducting quantum computing**: Currently, superconducting - based quantum computing requires extremely low operating temperatures (usually requiring liquid helium cooling), which greatly limits its application range. By introducing deep - level defects in semiconductor materials (such as the nitrogen - vacancy center NV in diamond), the operating temperature can be increased, making quantum technology more practical. 2. **Explore deep - level defects in 3C - SiC as the basis for quantum devices**: Since it is difficult to mass - produce diamonds of high quality, researchers have turned their attention to SiC, especially 3C - SiC. This material not only has a mature production process, but also its near - infrared luminescence characteristics are very suitable for quantum communication. In addition, the highly symmetric crystal structure of 3C - SiC makes the defect characteristics more unique, facilitating the addressing of individual defects, which is crucial for integrated quantum - optical applications. 3. **Achieve defect engineering**: By controlling growth conditions (such as growth rate, dopant type and concentration, etc.), specific types of deep - level defects can be precisely introduced in 3C - SiC. For example, it has been found that carbon vacancies (VC) are the common source of all detected defects, and the luminescence intensity of these defects is related to the aluminum doping concentration. This finding provides new ideas for future defect design. 4. **Increase the operating temperature**: Experimental results show that in the range of 175 K to 200 K, some defects can still maintain significant luminescence characteristics, and can even be excited up to 300 K. This means that using such materials may allow for a higher operating temperature, thereby simplifying the cooling process. For example, dry ice can be used instead of liquid helium for cooling. In summary, this paper aims to develop a completely new method for preparing 3C - SiC materials with quantum functions, and to achieve more efficient and practical quantum devices by regulating defects during the growth process.

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