Abstract:Spin-active defects in silicon carbide (SiC) are promising quantum light sources for realizing scalable quantum technologies. In different applications, these photoluminescent defects are often placed in a nanostructured host or close to surfaces in order to enhance the signal from the defects. However, proximity to the surface not only modifies frequencies of the quantum emission from the defect, but also adversely affects their photo-stability, resulting in blinking and/or photobleaching of the defect. These effects can be ameliorated by passivating surfaces with optimal adsorbates. In this work, we explore different passivation schemes using density functional theory-based calculations. We show that a uniform surface passivation with either hydrogen or with mixed hydrogen/hydroxyl groups completely removes surface states from the SiC band gap, restoring the optical properties of the defects.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: **How to improve the optical properties and photostability of near - surface spin defects in silicon carbide (SiC) through surface passivation schemes**. Specifically, the paper focuses on the situation in nanostructures or near the surface, where the quantum emission frequency of photoluminescence defects in SiC (such as the silicon vacancy V⁻¹ₛᵢ) will be affected by surface effects, and at the same time, its photoelectric stability will also decline due to blinking or photobleaching. To solve these problems, the author explored different surface passivation schemes through density - functional - theory (DFT) - based calculations to optimize the performance of these defects. ### Main problem decomposition: 1. **Performance degradation of near - surface defects**: - When the defect is close to the surface, the quantum emission frequency will change significantly. - The charge - state stability of the defect is reduced, which may lead to the transition from the negatively - charged state to the neutral state, thus affecting the device performance. 2. **Selection of passivation schemes**: - The paper studied the effects of three passivation schemes, hydrogen (-H), mixed hydrogen/hydroxyl (-H/OH), and fluorine (-F), on the surface of SiC nanowires. - The goal is to find a passivation scheme that can effectively remove the in - gap surface states, thereby restoring the optical properties of the defect and improving the photostability. 3. **Theoretical verification**: - Use DFT calculations to verify the effects of different passivation schemes on the structural, electronic, and optical properties. - Calculate the zero - phonon line (ZPL) to evaluate the specific improvement effect of passivation on the optical properties of near - surface defects. ### Key conclusions: - Hydrogen passivation (-H) and mixed hydrogen/hydroxyl passivation (-H/OH) can completely remove the in - gap surface states, restore the quantum emission frequency of the defect, and significantly improve the photostability. - Although fluorine passivation (-F) can partially remove the surface states, due to its chemical characteristics (high ionicity), it may introduce new energy levels similar to surface states, so it is not recommended. ### Formula summary: 1. Defect formation energy formula: $$ \Delta E_{\text{form}}(X;q) = E_{\text{Total}}(X;q) - E_{\text{Total}}(\text{ideal}, 0) + \mu_{\text{Si}} + q[E_{\text{VBM}}(X) + E_F] $$ where: - $\mu_{\text{Si}}$ is the chemical potential of silicon. - $E_{\text{Total}}(X;q)$ and $E_{\text{Total}}(\text{ideal}, 0)$ represent the total energies of the supercell with and without defects, respectively. - $E_{\text{VBM}}(X)$ is the valence - band - maximum energy of the defective supercell. 2. Valence - band - maximum energy calculation formula: $$ E_{\text{VBM}}(X) = E_{\text{VBM}}(\text{ideal}) + V_{\text{av}}(X) - V_{\text{av}}(\text{ideal}) $$ 3. Fractional ionicity formula (Pauling definition): $$ f_i(A - B) = 1 - \exp\left[-\frac{(EN_A - EN_B)^2}{4}\right] $$ where $EN_A$ and $EN_B$ are the electronegativities of elements A and B, respectively. Through the above methods and formulas, the paper successfully solved the problem of performance degradation of near - surface defects and proposed an effective passivation strategy.

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