Abstract:The negatively charged silicon monovacancy $V_{Si}^-$ in 4H-silicon carbide (SiC) is a spin-active point defect that has the potential to act as a qubit or quantum memory in solid-state quantum computation applications. Photonic crystal cavities (PCCs) can augment the optical emission of the $V_{Si}^-$, yet fine-tuning the defect-cavity interaction remains challenging. We report on two post-fabrication processes that result in enhancement of the $V_1^{'}$ optical emission from our 1-dimensional PCCs, indicating improved coupling between the ensemble of silicon vacancies and the PCC. One process involves below bandgap illumination at 785 nm and 532 nm wavelengths and above bandgap illumination at 325 nm, carried out at times ranging from a few minutes to several hours. The other process is thermal annealing at $100^o C$, carried out over 20 minutes. Every process except above bandgap irradiation improves the defect-cavity coupling, manifested in augmented Purcell factor enhancement of the $V_1^{'}$ zero phonon line at 77K. The below bandgap laser process is attributed to a modification of charge states, changing the relative ratio of $V_{Si}^0$ (dark state) to $V_{Si}^-$ (bright state), while the thermal annealing process may be explained by diffusion of carbon interstitials, $C_i$, that subsequently recombine with other defects to create additional $V_{Si}^-$s. Above bandgap radiation is proposed to initially convert $V_{Si}^{0}$ to $V_{Si}^-$, but also may lead to diffusion of $V_{Si}^-$ away from the probe area, resulting in an irreversible reduction of the optical signal. Observations of the PCC spectra allow insights into defect modifications and interactions within a controlled, designated volume and indicate pathways to improve defect-cavity interactions.

Optimum surface-passivation schemes for near-surface spin defects in silicon carbide

Optimum surface-passivation schemes for near-surface spin defects in silicon carbide

Surface Defects in 4H-Sic: Properties, Characterizations and Passivation Schemes

Site-dependent properties of quantum emitters in nanostructured silicon carbide

Optical charge state control of spin defects in 4H-SiC

Plasmonic-enhanced bright single spin defects in silicon carbide membranes

Defects in SiC for Quantum Computing

Optical and strain stabilization of point defects in silicon carbide

Room-temperature coherent control of implanted defect spins in silicon carbide

Energy levels and charge state control of the carbon antisite-vacancy defect in 4H-SiC

Incorporation and control of defects with quantum functionality during sublimation growth of cubic silicon carbide

Silicon Carbide Based Quantum Networking

The Optical Band Gap of Silicon Quantum Dots: The Influence of Surface Passivation

Quantum communication networks with defects in silicon carbide

Extended spin relaxation times of optically addressed telecom defects in silicon carbide

Photon Collection Enhancement of Shallow Single Spin Defects in Silicon Carbide

On-Demand Generation of Single Silicon Vacancy Defects in Silicon Carbide

Enhanced cavity coupling to silicon monovacancies in 4-H Silicon Carbide using below bandgap laser irradiation and low temperature thermal annealing

On-demand generation of shallow silicon vacancy in silicon carbide

Extended spin relaxation times of optically addressed vanadium defects in silicon carbide at telecommunication frequencies