Hydrogen reactions with dopants and impurities in solar silicon from first principles

José Coutinho,Diana Gomes,Vitor J. B. Torres,Tarek O. Abdul Fattah,Vladimir P. Markevich,Anthony R. Peaker

DOI: https://doi.org/10.1002/solr.202300639

2024-02-01

Abstract:We present a theoretical account of some of the most likely hydrogen-related reactions with impurities in n-type and p-type solar-grade silicon. These include reactions with dopants and carbon, which are relevant in the context of life-time degradation of silicon solar cells, most notably of light and elevated temperature degradation (LeTID) of the cells. Among the problems addressed, we highlight a comparative study of acceptor-enhanced dissociation of hydrogen molecules in B- and Ga-doped material, their subsequent reaction steps toward formation of acceptor-hydrogen pairs, the proposal of mechanisms which explain the observed kinetics of photo-/carrier-induced dissociation of PH and CH pairs in n-type Si, analysis of reactions involving direct interactions between molecules with P and C, and the assignment of several electron and hole traps with detailed atomistic- and wavefunction-resolved models.

Materials Science

What problem does this paper attempt to address?

The paper primarily explores the first-principles study of the reactions between hydrogen and dopants and impurities in solar-grade silicon materials, particularly addressing the issue of lifetime degradation in n-type and p-type solar-grade silicon, such as degradation under light and high temperatures (LeTID). Specifically, the paper attempts to solve the following key issues: 1. **Comparative Study**: Through first-principles calculations, the dissociation process of hydrogen molecules in boron (B) and gallium (Ga) doped p-type silicon materials and their subsequent reactions are compared to understand how these processes affect material performance. 2. **Formation of Acceptor-Hydrogen Complexes**: The interaction between hydrogen molecules and boron and gallium acceptors to form acceptor-hydrogen pairs (such as BH+2 and GaH+2) is studied in detail, and the differences in the electrical properties of these complexes and their impact on material performance are discussed. 3. **Study of Phosphorus-Hydrogen Pairs**: In n-type silicon, different configurations and stability of phosphorus-hydrogen pairs (PH pairs) are explored, especially the interaction mechanisms between PH pairs and minority carriers, which helps to understand the unstable behavior of PH pairs under illumination conditions. 4. **Study of Carbon-Hydrogen Complexes**: The understanding of carbon-hydrogen complexes (CHn complexes) is extended, particularly the reactions under solar cell preparation and operating conditions, and the impact of these complexes on material performance. In summary, the main purpose of this paper is to reveal the mechanisms of reactions between hydrogen and dopants and impurities in silicon materials through theoretical calculations, thereby providing a scientific basis for solving the problem of lifetime degradation in solar silicon cells. Special attention is given to the dissociation of hydrogen molecules enhanced by acceptors, the instability of PH pairs, and the characteristics of carbon-hydrogen complexes, which are key factors leading to the decline in solar cell efficiency.

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