Abstract:High temperature passivating contacts for c-Si based solar cells are intensively studied because of their potential in boosting solar cell efficiency while being compatible with industrial processes at high temperatures. In this work, the hydrogenation mechanism of fired passivating contacts (FPC) based on c-Si/SiOx/nc-SiCx(p) stacks was investigated. More specifically, the correlation between passivation and local re-distribution of hydrogen resulting from the application of different types of interfacial oxides (SiOx) and post-hydrogenation processes was analyzed. To do so, the applied processing sequence was interrupted at different stages in order to characterize the samples. To assess the hydrogen content, deuterium was introduced (alongside/instead of hydrogen) and secondary ion mass spectroscopy (SIMS) was used for depth profiling. Combining these results with lifetime measurements, the key role played by hydrogen in the passivation of defects at the c-Si/SiOx interface is discussed. The SIMS profiles show that hydrogen almost completely effuses out of the SiCx(p) during firing, but can be re-introduced by hydrogenation via forming gas anneal (FGA) or by release from a hydrogen containing layer such as SiNx:H. A pile-up of H at the c-Si/SiOx interface was observed and identified as a key element in the FPC's passivation mechanism. Moreover, the samples hydrogenated with SiNx:H exhibited higher H content compared to those treated by FGA, resulting in higher iVOC values. Further investigations revealed that the doping of the SiCx layer does not affect the amount of interfacial defects passivated by the hydrogenation process presented in this work. Eventually, an effect of the oxide's nature on passivation quality is evidenced. iVOC values of up to 706 mV and 720 mV were reached with FPC test structures using chemical and UV-O3 tunneling oxides, respectively, and up to 739 mV using a reference passivation sample featuring a ~25 nm thick thermal oxide.

Phosphorus deactivation mechanisms by hydrogenation in the n+ emitter region and its effect on defects passivation in n+pp+ poly-silicon solar cells

Optimum Hydrogen Injection in Phosphorus-Doped Polysilicon Passivating Contacts

Long-term stability study of the passivation quality of polysilicon-based passivation layers for silicon solar cells

Decoupling the Effects of Defects on Efficiency and Stability Through Phosphonates in Stable Halide Perovskite Solar Cells

Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation

Phosphorus-doped polycrystalline silicon passivating contacts via spin-on doping

The Passivation Characteristics of Poly-Si/SiOx Stack for High-Efficiency Silicon Solar Cells

Development of high conducting phosphorous doped nanocrystalline thin silicon films for silicon heterojunction solar cells application

Electrical Deactivation of Boron in p+-Polycrystalline Silicon/SiOx/Crystalline Silicon Passivating Contacts for Silicon Solar Cells

Study on Permanent Deactivation of the Light-Induced Degradation in P-Type Compensated Crystalline Silicon Solar Cells

Effect of diffusion doping-induced defects on shunt resistance affecting Si-nanowire solar cell performance

Enhancing the Selectivity and Transparency of the Electron Contact in Silicon Heterojunction Solar Cells by Phosphorus Catalytic Doping

Degradation Analysis of Perovskite Solar Cells via Short-Circuit Impedance Spectroscopy: A case study on NiOx passivation

Analysis of hydrogen distribution and migration in fired passivating contacts (FPC)

Enhancement of Electrical Properties of Nanostructured Polysilicon Layers Through Hydrogen Passivation

N+ Emitters Realized Using Ammonium Dihydrogen Phosphate for Silicon Solar Cells

First-principles study of intrinsic and hydrogen point defects in the earth-abundant photovoltaic absorber Zn3P2

Phosphine Oxide Derivative as a Passivating Agent to Enhance the Performance of Perovskite Solar Cells

Effect of annealing conditions on phosphorus inward diffusion from N + Poly-Si layer in N-type TOPCon solar cells

Dry Passivation Process for Silicon Heterojunction Solar Cells Using Hydrogen Plasma Treatment Followed by In Situ a-Si:H Deposition

Impact of the n+ emitter layer on the structural and electrical properties of p-type polycrystalline silicon thin-film solar cells