Abstract:High temperature passivating contacts for c-Si based solar cells are intensively studied because of their potential in boosting solar cell efficiency while being compatible with industrial processes at high temperatures. In this work, the hydrogenation mechanism of fired passivating contacts (FPC) based on c-Si/SiOx/nc-SiCx(p) stacks was investigated. More specifically, the correlation between passivation and local re-distribution of hydrogen resulting from the application of different types of interfacial oxides (SiOx) and post-hydrogenation processes was analyzed. To do so, the applied processing sequence was interrupted at different stages in order to characterize the samples. To assess the hydrogen content, deuterium was introduced (alongside/instead of hydrogen) and secondary ion mass spectroscopy (SIMS) was used for depth profiling. Combining these results with lifetime measurements, the key role played by hydrogen in the passivation of defects at the c-Si/SiOx interface is discussed. The SIMS profiles show that hydrogen almost completely effuses out of the SiCx(p) during firing, but can be re-introduced by hydrogenation via forming gas anneal (FGA) or by release from a hydrogen containing layer such as SiNx:H. A pile-up of H at the c-Si/SiOx interface was observed and identified as a key element in the FPC's passivation mechanism. Moreover, the samples hydrogenated with SiNx:H exhibited higher H content compared to those treated by FGA, resulting in higher iVOC values. Further investigations revealed that the doping of the SiCx layer does not affect the amount of interfacial defects passivated by the hydrogenation process presented in this work. Eventually, an effect of the oxide's nature on passivation quality is evidenced. iVOC values of up to 706 mV and 720 mV were reached with FPC test structures using chemical and UV-O3 tunneling oxides, respectively, and up to 739 mV using a reference passivation sample featuring a ~25 nm thick thermal oxide.

Origin of hydrogen passivation in 4 H -SiC

Assessing the Effect of Hydrogen on the Electronic Properties of 4H-Sic

Distribution and electronic structure of interstitial hydrogen atoms in β-SiC: a First-Principles study

Surface Defects in 4H-Sic: Properties, Characterizations and Passivation Schemes

Investigation on the Impact of Hydrogen on the Passivation of Silicon Surface States in Clean and Copper Contaminated Conditions

Molecular dynamics simulation of silicon vacancy defects in silicon carbide by hydrogen ion implantation and subsequent annealing

Theoretical study of hydrogenated 3C–SiC(001)-(2×1) surface

Electronic-Structure of Hydrogen-Vacancy Complexes in Crystalline Silicon - A Theoretical-Study

Electron-beam-induced current study of hydrogen passivation on grain boundaries in multicrystalline silicon: Influence of GB character and impurity contamination

From Jekyll to Hyde and Beyond: Hydrogen's Multifaceted Role in Passivation, H-Induced Breakdown, and Charging of Amorphous Silicon Nitride

Impurities in 4H Silicon Carbide: Site Preference, Lattice Distortion, Solubility, and Charge Transition Levels

Dynamical, Vibrational, Electronic and Optical Properties in c-Si:H with Bond-Centered-Hydrogen, H Dimers and Other H Complexes

Analysis of hydrogen distribution and migration in fired passivating contacts (FPC)

Identifying the charge states of carbon vacancies in 4H-SiC by ab initio metadynamics

First-principles study of electronic and diffusion properties of intrinsic defects in 4H-SiC

Band-Gap Engineering: Lithium Effect on the Electronic Properties of Hydrogenated 3C-SiC (1 1 0) Surfaces

High-Pressure Water-Vapor Annealing for Enhancement of A-Si:H Film Passivation of Silicon Surface

Amorphous/Crystalline Silicon Interface Stability: Correlation between Infrared Spectroscopy and Electronic Passivation Properties

Theoretical investigation of vacancy related defects at 4H-SiC(000$\bar{1}$)/SiO$_2$ interface after wet oxidation

Effect of hydrogen on the unintentional doping of 4H silicon carbide

Defect State Density and Orbital Localization in a-Si:H/c-Si Heterojunction and the Role of H