Proximity Gettering of Cu at A (110)/(001) Grain Boundary Interface Formed by Direct Silicon Bonding

X. Yu,J. Lu,K. Youssef,G. Rozgonyi
DOI: https://doi.org/10.1063/1.3151914
IF: 4
2009-01-01
Applied Physics Letters
Abstract:We have demonstrated that a direct silicon bonded (110)/(001) interface, fabricated using hybrid orientation technology (HOT), acts as a proximity gettering center for Cu during quench annealing. The Cu gettering efficiency, which increases with annealing temperature, can reach more than 99%. Gettered Cu impurities tend to form colonylike precipitates at the (110)/(001) grain boundary (GB) interface when quenched from an elevated temperature. It is believed that interfacial GB imperfections initiate the Cu precipitation, and then, due to the release of a large number of self-interstitials, dislocation loops form and become new gettering centers which enhance the Cu gettering efficiency. These results are of interest for the defect engineering of the HOT wafer in advanced microelectronics and for enhancing our understanding of GBs in multicrystalline photovoltaic silicon.
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