Abstract:Crystalline silicon, including Czochralski silicon (Cz-Si) and multicrystalline silicon (mc-Si),is main material for photovoltaic (PV) industry. How to produce more productive and less expensive crystalline silicon materials is still a big challenge. As we know, the seed-assisted growth method can be used to fabricate cast-mono (CM-Si) silicon by directional solidification, which should combine the both advantages of Cz-Si and mc-Si. However, there remain some problems to be resolved in growing CM-Si silicon ingots, particularly the control of dislocations which are the major and most detrimental defects in CM-Si. They can act as precipitation sites for impurities and thus reduce the carrier lifetime in ingots. Unlike mc-Si ingots, once dislocations are generated in the bottom of CM-Si ingots, they will glide and propagate along the growth direction without hindrance due to the lack of grain boundaries. In this presentation, we review our recent work of how to control defects, specially dislocations, in CM-Si. We induce a grain boundary by adjusting the orientation of seeds which can suppress the generation of dislocations originated from the junction of seeds. We have investigated the effect of Σ5, Σ13a grain boundary relationship at seed junctions of <100>-oriented CM-Si on dislocations and solar cell performance. We also use <110>-oriented seeds to grow new orientation CM-Si ingots to control the generation and propagation of dislocations. The results show that by designing the orientation of seeds, the dislocation density can be decreased and the solar cell efficiency can be improved obviously.

Gettering of Copper by Defects in Silicon

Precipitation and gettering behaviors of copper in multicrystalline silicon used for solar cells

Internal Gettering of Copper Contamination in Czochralski Silicon

Proximity Gettering of Cu at A (110)/(001) Grain Boundary Interface Formed by Direct Silicon Bonding

Germanium in Czochralski Silicon

Gettering of defects in silicon by porous silicon

Effect of Intrinsic Point Defects on Copper Precipitation in Large-Diameter Czochralski Silicon

Grown-in Defects in Heavily Phosphorus-Doped Czochralski Silicon

Low Temperature Iron Gettering by Grown-in Defects in P-Type Czochralski Silicon

Phosphorus Diffusion Gettering of Substitutional Metal Contaminants at A Small-Angle Grain Boundary in N-Type Silicon: the Case of Gold

Defect Reactions In Copper-Diffused And Quenched P-Type Silicon

Defect Engineering In Silicon Used For Ultra Large-Scale Integrated Circuits

Effect Of Point Defects On Copper-Related Deep Levels In P-Type Czochralski Silicon

Effect of Point Defects on the Recombination Activity of Copper Precipitates in P-Type Czochralski Silicon

Copper Precipitation in Nitrogen-Doped Czochralski Silicon

Investigation of Intrinsic Gettering for Germanium Doped Czochralski Silicon Wafer

Copper Precipitates in Multicrystalline Silicon for Solar Cells

(Invited) Defects in Cast-Mono Crystalline Silicon

Intrinsic Gettering in Germanium-Doped Czochralski Crystal Silicon Crystals

Investigation of Iron Impurity Gettering at Dislocations in a SiGe/Si Heterostructure

Flow Pattern Defects in Germanium-Doped Czochralski Silicon Crystals