Abstract:It is known that the interstitial iron concentration in silicon is reduced after annealing silicon wafers coated with plasma-enhanced chemical vapour deposited (PECVD) silicon nitride films. The underlying mechanism for the significant iron reduction has remained unclear and is investigated in this work. Secondary ion mass spectrometry (SIMS) depth profiling of iron is performed on annealed iron-contaminated single-crystalline silicon wafers passivated with PECVD silicon nitride films. SIMS measurements reveal a high concentration of iron uniformly distributed in the annealed silicon nitride films. This accumulation of iron in the silicon nitride film matches the interstitial iron loss in the silicon bulk. This finding conclusively shows that the interstitial iron is gettered by the silicon nitride films during annealing over a wide temperature range from 250 °C to 900 °C, via a segregation gettering effect. Further experimental evidence is presented to support this finding. Deep-level transient spectroscopy analysis shows that no new electrically active defects are formed in the silicon bulk after annealing iron-containing silicon with silicon nitride films, confirming that the interstitial iron loss is not due to a change in the chemical structure of iron related defects in the silicon bulk. In addition, once the annealed silicon nitride films are removed, subsequent high temperature processes do not result in any reappearance of iron. Finally, the experimentally measured iron decay kinetics are shown to agree with a model of iron diffusion to the surface gettering sites, indicating a diffusion-limited iron gettering process for temperatures below 700 °C. The gettering process is found to become reaction-limited at higher temperatures.

Investigation of Iron Impurity Gettering at Dislocations in a SiGe/Si Heterostructure

Evolution of secondary defects in arsenic implanted Si

Stable and Metastable Configurations of Iron Atoms in SiGe Alloys

The dislocation distribution characteristics of a multi-crystalline silicon ingot and its impact on the cell efficiency

Low Temperature Iron Gettering by Grown-in Defects in P-Type Czochralski Silicon

Interaction of Iron with the Local Environment Insigealloys Investigated with Laplace Transform Deep Level Spectroscopy

Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Electrical Property Of Iron-Related Defects In N-Type Dislocated Czochralski Silicon Crystal Used For Solar Cells

Effects of Germanium on Movement of Dislocations in P-Type Czochralski Silicon

Electron-beam-induced Current Study of Grain Boundaries in Multicrystalline Si

Effect of oxygen precipitates on dislocation motion in Czochralski silicon

Study Of Si-Ge Interdiffusion With a High Phosphorus Doping Concentration

Electronic effects of light impurities on edge dislocation motion in iron at T=0 K

Structural Characterization And Iron Detection At Sigma 3 Grain Boundaries In Multicrystalline Silicon

Two-peak Characteristic Distribution of Iron Impurities at the Bottom of Cast Quasi-Single-crystalline Silicon Ingot

Iron Contamination in Cast Quasi-Single Crystalline Silicon Ingots

Investigation of Intrinsic Gettering for Germanium Doped Czochralski Silicon Wafer

Phosphorus Diffusion Gettering of Substitutional Metal Contaminants at A Small-Angle Grain Boundary in N-Type Silicon: the Case of Gold

Gettering of Copper by Defects in Silicon