Abstract:It is known that the interstitial iron concentration in silicon is reduced after annealing silicon wafers coated with plasma-enhanced chemical vapour deposited (PECVD) silicon nitride films. The underlying mechanism for the significant iron reduction has remained unclear and is investigated in this work. Secondary ion mass spectrometry (SIMS) depth profiling of iron is performed on annealed iron-contaminated single-crystalline silicon wafers passivated with PECVD silicon nitride films. SIMS measurements reveal a high concentration of iron uniformly distributed in the annealed silicon nitride films. This accumulation of iron in the silicon nitride film matches the interstitial iron loss in the silicon bulk. This finding conclusively shows that the interstitial iron is gettered by the silicon nitride films during annealing over a wide temperature range from 250 °C to 900 °C, via a segregation gettering effect. Further experimental evidence is presented to support this finding. Deep-level transient spectroscopy analysis shows that no new electrically active defects are formed in the silicon bulk after annealing iron-containing silicon with silicon nitride films, confirming that the interstitial iron loss is not due to a change in the chemical structure of iron related defects in the silicon bulk. In addition, once the annealed silicon nitride films are removed, subsequent high temperature processes do not result in any reappearance of iron. Finally, the experimentally measured iron decay kinetics are shown to agree with a model of iron diffusion to the surface gettering sites, indicating a diffusion-limited iron gettering process for temperatures below 700 °C. The gettering process is found to become reaction-limited at higher temperatures.

Low Temperature Iron Gettering by Grown-in Defects in P-Type Czochralski Silicon

Internal Gettering of Copper Contamination in Czochralski Silicon

Grown-In Defects in Heavily Boron-Doped Czochralski Silicon

Grown-in Defects in Heavily Phosphorus-Doped Czochralski Silicon

Defect Engineering In Silicon Used For Ultra Large-Scale Integrated Circuits

Transmission Electron Microscopy Investigation of the Micro-Defects in Czochralski Silicon

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Effects of Annealing Atmosphere on Bulk Micro-Defects in Czochralski Silicon Wafer

Enhanced Internal Gettering of Iron in n/n<sup>+</sup> Epitaxial Silicon Wafer: Effect of High Temperature Rapid Thermal Annealing in Nitrogen Ambient

Iron Precipitation in As-Received Czochralski Silicon During Low Temperature Annealing

High temperature nucleation of oxygen precipitates in Germanium-doped Czochralski silicon

Correlation Between Oxygen Precipitation and Extended Defects in Czochralski Silicon: Investigation by Means of Scanning Infrared Microscopy

EFFECT OF VARIABLE TEMPERATURE PHOSPHOROUS GETTERING TREATMENTS ON THE PERFORMANCE OF MULTICRYSTALLINE SILICON

Thermal History Effect on the Nucleation of Oxygen Precipitates in Germanium Doped Cz-silicon Studied by High-Energy X-ray Diffraction

Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films

Germanium in Czochralski Silicon

Internal gettering for germanium-doped Czochralski silicon: Treated by rapid-thermal-anneal based processing simulation

Influence of Nickel Precipitation on the Formation of Denuded Zone in Czochralski Silicon

Intrinsic Gettering in Germanium-Doped Czochralski Crystal Silicon Crystals

Evolution of secondary defects in arsenic implanted Si

Effect of Carbon Doping on Oxygen Precipitation Behavior in Internal Gettering Processing for Czochralski Silicon