Abstract:For nitrogen-doped Czochralski (NCZ) silicon, it is well known that nitrogen (N) and oxygen (O) impurities can interact to form nitrogen–oxygen shallow thermal donors (N–O STDs); moreover, the N impurities can be involved into heterogeneous nucleation to facilitate the formation of grown-in oxide precipitates. However, how the N impurities participate in the growth of grown-in oxide precipitates during the post-anneal remains unclear. Besides, the correlation between the formation of N–O STDs and the growth of grown-in oxide precipitates is yet to be revealed. In this work, the effects of pre-anneals at temperatures of 900–1200 °C on the formation of N–O STDs at 650 °C in NCZ silicon have been first investigated. Thus, it has been found that the more significant growth of grown-in oxide precipitates during the pre-anneal, which consumes much more N impurities, leads to forming much fewer N–O STDs. This finding stimulates us to explore the mechanism for the participation of N impurities in the growth of grown-in oxide precipitates. To this end, the capture of N impurities by the oxide precipitates, on the one hand, and the release of N impurities from the oxide precipitates, on the other hand, have been investigated by two systematically constructed experiments. The obtained results enable us to reasonably propose that the N impurities participating in the growth of grown-in oxide precipitates predominately reside at the oxide precipitate/Si interfaces, which reduces the interfacial energies, thus favoring the growth of grown-in oxide precipitates. Such a viewpoint is well supported by the density functional theory calculations. In a word, this work has gained an insight into the mechanism for the participation of N impurities in the growth of grown-in oxide precipitates, starting from exploring the correlation between the formation of N–O STDs and the growth of grown-in oxide precipitates.

Enhanced Internal Gettering of Iron in n/n<sup>+</sup> Epitaxial Silicon Wafer: Effect of High Temperature Rapid Thermal Annealing in Nitrogen Ambient

Enhanced Internal Gettering in N/n+ Epitaxial Silicon Wafer: Coaction of Nitrogen Impurity and Vacancy on Oxygen Precipitation in Substrate

Rapid-Thermal-Processing-Based Intrinsic Gettering For Nitrogen-Doped Czochralski Silicon

High Temperature Nitrogen Annealing Induced Interstitial Oxygen Precipitation in Silicon Epitaxial Layer on Heavily Arsenic-Doped Silicon Wafer

Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films

Nitrogen Enhanced Oxygen Precipitation in Czochralski Silicon Wafers Coated with Silicon Nitride Films

Physical Mechanism Underlying the Enhancement Effect of Carbon in Heavily Phosphorus-Doped Czochralski Silicon Substrate on Phosphorus Out-Diffusion Within N/n+ Epitaxial Wafer

Effect of Ramping Anneals under Inert or Oxidizing Ambient on the Formation of Oxygen Precipitate Denuded Zone in Nitrogen‐doped Czochralski Silicon Wafers

Effects of Rapid Thermal Processing on Oxide Precipitation in Conventional and Nitrogen‐doped Czochralski Silicon

Thermal Nitridation Kinetics of Silicon Wafers in Nitrogen Atmosphere During Annealing

Internal Gettering of Copper Contamination in Czochralski Silicon

Kinetics of Nitrogen Indiffusion in Czochralski Silicon Annealed in Nitrogen Ambient

Effects of high temperature rapid thermal processing on oxygen precipitation in heavily arsenic-doped Czochralski silicon

Enhanced Oxygen Precipitation In Neutron-Irradiated Nitrogen-Doped Czochralski Silicon Crystal

Intrinsic gettering of Czochralski silicon annealed in argon and nitrogen atmosphere

Oxygen Precipitation in Conventional and Nitrogen Co-Doped Heavily Arsenic-Doped Czochralski Silicon Crystals: Oswald Ripening

On the Mechanism Underlying the Elimination of Nitrogen-Oxygen Shallow Thermal Donors in Nitrogen-Doped Czochralski Silicon at Elevated Temperatures

Enhancement of Oxygen Precipitation in Czochralski Silicon Wafers by High-Temperature Anneals

Intrinsic Gettering In Nitrogen Doped Czochralski Crystal Silicon

Effects of Annealing Atmosphere on Bulk Micro-Defects in Czochralski Silicon Wafer

Participation of Nitrogen Impurities in the Growth of Grown-in Oxide Precipitates in Nitrogen-Doped Czochralski Silicon