Abstract:Czochralski (CZ) silicon is a base material for manufacturing integrated circuits (ICs). The mechanical strength of CZ silicon determines the processing limitations and often dominates the issues related to packaging and failure of ICs. With the ever-smaller feature size of ICs, the scaling of device dimensions may indirectly lead to increase the stress in silicon substrate, thus increasing the probability of generating dislocations. Consequently, improving the mechanical strength of CZ silicon is of significance for increasing the manufacturing yield of ICs. In this work, we propose a strategy of co-doping germanium (Ge) impurity and nitrogen (N) impurity into CZ silicon to achieve better mechanical strength. In order to explore the feasibility of such a strategy, we comparatively investigate the room-temperature hardness and dislocation gliding behaviors in the temperature range of 600–1200 ℃ in the conventional CZ silicon, Ge-doped CZ silicon, N-doped CZ silicon, as well as N and Ge co-doped CZ silicon. The significant experimental results are described as follows. 1) Ge-doping, N-doping or co-doping of Ge and N hardly influences the hardness and therefore the dislocation gliding behavior at room temperature. 2) The suppressing effect of N-doping on the dislocation gliding is remarkable at 600–1000 ℃ and becomes weakened at the temperatures higher than 1100 ℃, while Ge-doping hardly affects the dislocation gliding at 600–900 ℃ but exhibits a strong suppressing effect on the dislocation gliding at 1000–1200 ℃. 3) Co-doping Ge and N impurities into CZ silicon can take the complementary advantages of both Ge- and N-doping to suppress the dislocation gliding at 600–1200 ℃. It is believed that N-doping can result in the formation of N-O complex-related pinning agents within the dislocation cores to suppress the dislocation gliding at 600–1000 ℃. For Ge-doping, it is supposed that Ge-O complexes acting as the pinning agents can form near the front of a single dislocation when the temperature is as high as 1000 ℃ and above. In a word, it is verified in this work that co-doping Ge and N into CZ silicon can further improve the mechanical strength at the processing temperatures of ICs fabrication.

Effect of Carbon Doping on Oxygen Precipitation Behavior in Internal Gettering Processing for Czochralski Silicon

The Effect of the Ramping Rate on Oxygen Precipitation and the Denuded Zone in Heavily Doped Czochralski Silicon

Oxygen Precipitation in Heavily Phosphorus-Doped Czochralski Silicon: Effect of Nitrogen Codoping

Effect of Ramping Anneals under Inert or Oxidizing Ambient on the Formation of Oxygen Precipitate Denuded Zone in Nitrogen‐doped Czochralski Silicon Wafers

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Crystal-originated Particles in Germanium-Doped Czochralski Silicon Crystal

Effect of Ramping from Low Temperatures on Oxygen Precipitation in Czochralski Silicon

Grown-In Defects in Heavily Boron-Doped Czochralski Silicon

High temperature nucleation of oxygen precipitates in Germanium-doped Czochralski silicon

Effect of Germanium Codoping on the Grown‐In Oxide Precipitates in Nitrogen‐Doped Czochralski Silicon

Oxygen Precipitation in Ge-doped Czochralski-silicon at 900 °C Investigated by in Situ High Energy X-Ray Diffraction

Effect of carbon on oxygen precipitation in Czochralski silicon for solar cells

Impact of Germanium Co-Doping on Oxygen Precipitation in Heavily Boron-Doped Czochralski Silicon

The Effect of Germanium Doping on Oxygen Donors in Czochralski-Grown Silicon

Effect Of Nitrogen Doping On The Dissolution Of Oxygen Precipitates In Czochralski Silicon During Rapid Thermal Annealing

Oxygen Precipitation in Heavily Phosphorus-doped Czochralski Silicon

Effects of Co-Doping Nitrogen and Germanium on Dislocation Gliding in Czochralski Silicon: Implication for Improving Mechanical Strength

Physical Mechanism Underlying the Enhancement Effect of Carbon in Heavily Phosphorus-Doped Czochralski Silicon Substrate on Phosphorus Out-Diffusion Within N/n+ Epitaxial Wafer

Oxygen Precipitation of Nitrogen-Doped Czochralski Silicon Subjected to Multi-Step Thermal Process

Mechanical Strength of Czochralski Silicon Crystal: Effects of Co-Doping Germanium and Nitrogen

Effects of Annealing Atmosphere on Bulk Micro-Defects in Czochralski Silicon Wafer