Abstract:Crystalline silicon, including Czochralski silicon (Cz-Si) and multicrystalline silicon (mc-Si),is main material for photovoltaic (PV) industry. How to produce more productive and less expensive crystalline silicon materials is still a big challenge. As we know, the seed-assisted growth method can be used to fabricate cast-mono (CM-Si) silicon by directional solidification, which should combine the both advantages of Cz-Si and mc-Si. However, there remain some problems to be resolved in growing CM-Si silicon ingots, particularly the control of dislocations which are the major and most detrimental defects in CM-Si. They can act as precipitation sites for impurities and thus reduce the carrier lifetime in ingots. Unlike mc-Si ingots, once dislocations are generated in the bottom of CM-Si ingots, they will glide and propagate along the growth direction without hindrance due to the lack of grain boundaries. In this presentation, we review our recent work of how to control defects, specially dislocations, in CM-Si. We induce a grain boundary by adjusting the orientation of seeds which can suppress the generation of dislocations originated from the junction of seeds. We have investigated the effect of Σ5, Σ13a grain boundary relationship at seed junctions of <100>-oriented CM-Si on dislocations and solar cell performance. We also use <110>-oriented seeds to grow new orientation CM-Si ingots to control the generation and propagation of dislocations. The results show that by designing the orientation of seeds, the dislocation density can be decreased and the solar cell efficiency can be improved obviously.

Aluminum Gettering in Photovoltaic Silicon

EFFECT OF VARIABLE TEMPERATURE PHOSPHOROUS GETTERING TREATMENTS ON THE PERFORMANCE OF MULTICRYSTALLINE SILICON

Aluminum-Doped Crystalline Silicon and Its Photovoltaic Application

Precipitation and gettering behaviors of copper in multicrystalline silicon used for solar cells

EBIC INVESTIGATION OF AL GETTERING OF CAST-MULTICRYSTALLINE SILICON

Gettering of iron by aluminum oxide thin films on silicon wafers: Kinetics and mechanisms

Electron-beam-induced Current Study of Grain Boundaries in Multicrystalline Si

Oxygen and Carbon Precipitation in Multicrystalline Solar Silicon

Oxygen Annealing Behavior in Multicrystalline Silicon

The characterization of high quality multicrystalline silicon by the electron beam induced current method

Impurity Gettering by Atomic-Layer-Deposited Aluminium Oxide Films on Silicon at Contact Firing Temperatures (Phys. Status Solidi RRL 3/2018)

Reduction of trapping and recombination in upgraded metallurgical grade silicon: Impact of phosphorous diffusion gettering

The dislocation distribution characteristics of a multi-crystalline silicon ingot and its impact on the cell efficiency

(Invited) Defects in Cast-Mono Crystalline Silicon

Electron-beam-induced current study of hydrogen passivation on grain boundaries in multicrystalline silicon: Influence of GB character and impurity contamination

Influence of Germanium on Silicon Wafers Used for Solar Cells

Improved performance on multi-crystalline silicon solar cells by optimizing aluminum back surface field process

Gettering Efficacy of APCVD-Based Process Steps for Low-Cost PERT-Type Multicrystalline Silicon Solar Cells

Phosphorous Diffusion Gettering of Trapping Centers in Upgraded Metallurgical-Grade Solar Silicon

Improving the Quality of the Deteriorated Regions of Multicrystalline Silicon Ingots During General Solar Cell Processes

Highly Conductive p-Type Silicon Carbon Alloys Deposited by Hot-Wire Chemical Vapor Deposition