Abstract:Summary form only. Germanium doped Czochralski silicon has been invented and investigated last decade. It has been used in ultra larger integrated circuits (ULSI). It was reported that germanium doping in Czochralski silicon could eliminate void defects, enhance oxygen precipitation, improving internal gettering ability, and also increase mechanical strength. In this presentation, germanium doped crystal silicon used to fabricate silicon solar cells has been reviewed on basis of our recent work. The behavior of germanium-doped crystal silicon used for solar cells, specially its mechanical strength and influence on light degardation of cells, has been discussed. It is considered that germanium doping will not affect the electrical properties of silicon wafers, but could increase the mechanical strength of silicon wafers so as to decrease the breakage, which is benefit for low-cost solar cells. In our experiments, both germanium doped single-crystalline silicon ingot and germanium doped multi-crystalline silicon ingot were manufactured. The samples had a germanium doping concentration of about 1018 cm-3~1019 cm-3. The three-point bending, indentation, scratch, and dislocation moving techniques were used to investigate the fracture strength of silicon wafers with or without germanium doping. It was indicated that germanium doping increased the fracture strength by about 20% comparing to conventional silicon wafers. Furthermore, it was found that during wafer slicing, germanium doped silicon has a relatively lower fracture percentage than conventional silicon. Furthermore, the solar cells made of germanium doped silicon had slightly higher average efficiency than that of conventional silicon. It is considered that germanium-doped crystal silicon possesses higher mechanical strength, and suppresses the light degradation of sola cells under light illumination. It is benefit to use germanium-doped crystal silicon to fabricate sol- - ar cells.

Influence of Germanium on Silicon Wafers Used for Solar Cells

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Germanium doping for improved silicon substrates and devices

Germanium in Czochralski Silicon

Germanium-doped Crystalline Silicon: Effects of Germanium Doping on Boron-Related Defects

Germanium-doped Crystal Silicon for Solar Cells

Improved fracture strength of multicrystalline silicon by germanium doping

Germanium-Doped Crystalline Silicon: A New Substrate for Photovoltaic Application

On the Assumed Impact of Germanium Doping on Void Formation in Czochralski-Grown Silicon

Characterization of a Czochralski Grown Silicon Crystal Doped with 1020 Cm‐3 Germanium

Influence of Germanium Doping on the Mechanical Strength of Czochralski Silicon Wafers

The Effect of Germanium Doping on Oxygen Donors in Czochralski-Grown Silicon

Investigating impurities and surface properties in germanium co-doped multi-crystalline silicon: a combined computational and experimental investigation

Germanium Effect on Oxygen Precipitation in Czochralski Silicon

Effects of Germanium Doping on the Microstructure and Photoelectrochemical Properties of TiO2 Films by Sol-Gel Method

Impact of Germanium Co-Doping on Oxygen Precipitation in Heavily Boron-Doped Czochralski Silicon

Enhancement Effect of Germanium on Oxygen Precipitation in Czochralski Silicon

Germanium Effect on Oxygen‐related Defects in Czochralski Silicon

Effects of Germanium on Movement of Dislocations in P-Type Czochralski Silicon

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Thermal History Effect on the Nucleation of Oxygen Precipitates in Germanium Doped Cz-silicon Studied by High-Energy X-ray Diffraction