Abstract:Silicon quantum dot (Si QD) tandem solar cell is a promising cell structure for realising high efficiency at low cost. The tandem solar cell effectively harnesses energy from the solar spectrum by stacking two or more cells together in the order of descending band gaps. Due to quantum confinement, the band gap of silicon based nanostructures such as Si QDs can be tailored by varying the size of the QDs. Solar cells and light emitting diodes based on Si QDs have been realised in experiments. However, current crowding due to high lateral resistance remains to be a major problem for Si QD devices grown on quartz substrates. Annealed silicon rich carbide (SRC), owing to its electrical conductivity, thermal stability and energy band gap compatible with Si QD cell fabrication, has the potential to overcome this problem. Further, this quasi-transparent thin-film can be used as either substrate or superstrate of a Si QD solar cell and therefore provides flexibility in cell structure design. Here, we investigate the physical, optical and electrical properties of the new material as functions of silicon concentration and doping conditions via a number of characterisation techniques including X-ray diffraction, Raman spectroscopy, ultraviolet-visible-infrared spectroscopy and four-point probe measurement. Some discoveries, including the lower crystallisation temperature of SiC within SRC, are also discussed. The research may provide some insight into the optimisation of annealed SRC as the new conductive material for Si QD solar cell and may boost the final arrival of all-silicon tandem solar cell.

Aluminum-Doped Crystalline Silicon and Its Photovoltaic Application

Improved Nanocrystal Formation, Quantum Confinement and Carrier Transport Properties of Doped Si Quantum Dot Superlattices for Third Generation Photovoltaics

Silicon Quantum Dot Based Solar Cells: Addressing the Issues of Doping, Voltage and Current Transport

Silicon Rich Carbide As A Conductive Substrate For Si Qd Solar Cells

Preparation and Photoluminescence Properties of Eu3+-Doped Al2O3 Films on Silicon Substrates by the Sol-gel Method

Aluminum Gettering in Photovoltaic Silicon

Efficiency improvement of crystalline silicon solar cells with a back-surface field produced by boron and aluminum co-doping

Influence of Al-doping on Electroluminescence of Silicon-Based Films

Alkali Metals Doping for High-Performance Planar Heterojunction Sb2S3 Solar Cells

Highly Conductive p-Type Silicon Carbon Alloys Deposited by Hot-Wire Chemical Vapor Deposition

Analysis of the Photovoltaic Properties of N-Type Compensated Silicon Solar Cells with the Al-Alloyed Emitter

Impact of Carbon Co-Doping on the Performance of Crystalline Silicon Solar Cells

The effect of Al3+ treatment on charge dynamics in dye-sensitized nanocrystalline TiO2 solar cells explored by photovoltage measurements

Improvement of Power Conversion Efficiency of Cu <sub>2</sub>znsn(s,se) <sub>4</sub> Solar Cells by Al Doped CdS

Bandgap Engineering and Enhancing Optoelectronic Performance of a Lead-Free Double Perovskite Cs2AgBiBr6 Solar Cell via Al Doping

Influence of the Compensation Level on the Performance of P-Type Crystalline Silicon Solar Cells: Theoretical Calculations and Experimental Study

Chromium Trioxide Hole-Selective Heterocontacts for Silicon Solar Cells

Improved performance on multi-crystalline silicon solar cells by optimizing aluminum back surface field process

Enhancing Photovoltaic Effect of Co-2-C-98/Al2o3/Si Heterostructures by Al2o3

Effect of Subgrains on the Performance of Mono-Like Crystalline Silicon Solar Cells

Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide