Abstract:Silicon quantum dot (Si QD) tandem solar cell is a promising cell structure for realising high efficiency at low cost. The tandem solar cell effectively harnesses energy from the solar spectrum by stacking two or more cells together in the order of descending band gaps. Due to quantum confinement, the band gap of silicon based nanostructures such as Si QDs can be tailored by varying the size of the QDs. Solar cells and light emitting diodes based on Si QDs have been realised in experiments. However, current crowding due to high lateral resistance remains to be a major problem for Si QD devices grown on quartz substrates. Annealed silicon rich carbide (SRC), owing to its electrical conductivity, thermal stability and energy band gap compatible with Si QD cell fabrication, has the potential to overcome this problem. Further, this quasi-transparent thin-film can be used as either substrate or superstrate of a Si QD solar cell and therefore provides flexibility in cell structure design. Here, we investigate the physical, optical and electrical properties of the new material as functions of silicon concentration and doping conditions via a number of characterisation techniques including X-ray diffraction, Raman spectroscopy, ultraviolet-visible-infrared spectroscopy and four-point probe measurement. Some discoveries, including the lower crystallisation temperature of SiC within SRC, are also discussed. The research may provide some insight into the optimisation of annealed SRC as the new conductive material for Si QD solar cell and may boost the final arrival of all-silicon tandem solar cell.

Efficiency improvement of crystalline silicon solar cells with a back-surface field produced by boron and aluminum co-doping

Improved performance on multi-crystalline silicon solar cells by optimizing aluminum back surface field process

Silicon Rich Carbide As A Conductive Substrate For Si Qd Solar Cells

Towards Thinner and Low Bowing Silicon Solar Cells: Form the Boron and Aluminum Co‐doped Back Surface Field with Thinner Metallization Film

Silicon Quantum Dot Based Solar Cells: Addressing the Issues of Doping, Voltage and Current Transport

Aluminum-Doped Crystalline Silicon and Its Photovoltaic Application

Impact of Carbon Co-Doping on the Performance of Crystalline Silicon Solar Cells

Growth and Characterization of Boron-Doped na-Si:H Films Used as Window Layer Material of Solar Cells

Back-Surface-Field Effects at the Heterojunctions between Boron-Doped p-Type Hydrogenated Amorphous Silicon and Crystalline Silicon in Thin-Film Crystalline Silicon Solar Cells

Boron-doping of cubic SiC for intermediate band solar cells: a scanning transmission electron microscopy study

Superb improvement of boron doping in selective emitter for TOPCon solar cells via boron-doped silicon paste

Boron doped amorphous diamond window layer deposited by filtered arc for amorphous silicon alloy p–i–n solar cells

Impact of Boron Doping Concentration on Tunnel Oxide Passivated Contact in Front Surface for N-Type Poly-Si Based Passivated Contact Bifacial Solar Cells

Effect of Dopant Compensation on the Performance of Czochralski Silicon Solar Cells

An Industrial Solution to Light-Induced Degradation of Crystalline Silicon Solar Cells

Presented at the 31st European PV Solar Energy Conference and Exhibition, 14-18 September 2015, Hamburg, Germany OPTIMIZATION OF BBr3 DIFFUSION PROCESSES FOR N-TYPE SILICON SOLAR CELLS

A Novel Processing Technology for High‐Efficiency Silicon Solar Cells

Deposition of Boron-Doped Nanocrystalline Silicon Carbide Thin Films Using H2-Ar Mixed Dilution for the Application on Thin Film Solar Cells

Influence of the Compensation Level on the Performance of P-Type Crystalline Silicon Solar Cells: Theoretical Calculations and Experimental Study

Carrier Transport Enhancement Mechanism in Highly Efficient Antimony Selenide Thin‐Film Solar Cell

Chromium Trioxide Hole-Selective Heterocontacts for Silicon Solar Cells