Abstract:Crystalline silicon (c-Si) solar cells with passivation stacks consisting of a polycrystalline silicon (poly-Si) layer and a thin interfacial silicon dioxide (SiO2) layer show high conversion efficiencies. Since the poly-Si layer in this structure acts as a carrier transport layer, high doping of the poly-Si layer is crucial for high conductivity and the efficient transport of charge carriers from the bulk to a metal contact. In this respect, conventional furnace-based high-temperature doping methods are limited by the solid solubility of the dopants in silicon. This limitation particularly affects p-type doping using boron. Previously, we showed that laser activation overcomes this limitation by melting the poly-Si layer, resulting in an active concentration beyond the solubility limit after crystallization. High electrically active boron concentrations ensure low contact resistivity at the (contact) metal/semiconductor interface and allow for the maskless patterning of the poly-Si layer by providing an etch-stop layer in an alkaline solution. However, the high doping concentration degrades during long high-temperature annealing steps. Here, we performed a test of the stability of such a high doping concentration under thermal stress. The active boron concentration shows only a minor reduction during SiNx:H deposition at a moderate temperature and a fast-firing step at a high temperature and with a short exposure time. However, for an annealing time tanneal = 30 min and an annealing temperature 600 °C ≤ Tanneal≤ 1000 °C, the high conductivity is significantly reduced, whereas a high passivation quality requires annealing in this range. We resolve this dilemma by introducing a second, healing laser reactivation step, which re-establishes the original high conductivity of the boron-doped poly-Si and does not degrade the passivation. After a thermal annealing temperature Tanneal = 985 °C, the reactivated layers show high sheet conductance (Gsh) with Gsh = 24 mS sq and high passivation quality, with the implied open-circuit voltage (iVOC) reaching iVOC = 715 mV. Therefore, our novel three-step process consisting of laser activation, thermal annealing, and laser reactivation/healing is suitable for fabricating highly efficient solar cells with p++-poly-Si/SiO2 contact passivation layers.

Towards Thinner and Low Bowing Silicon Solar Cells: Form the Boron and Aluminum Co‐doped Back Surface Field with Thinner Metallization Film

Efficiency improvement of crystalline silicon solar cells with a back-surface field produced by boron and aluminum co-doping

Low Recombination Firing-Through Al Paste for N-Type Solar Cell with Boron Emitter

Improved performance on multi-crystalline silicon solar cells by optimizing aluminum back surface field process

Thin Al2O3 passivated boron emitter of n-type bifacial c-Si solar cells with industrial process

Boron Diffusion Of The Silicon Solar Cell With Bbr3

< 50-μm thin crystalline silicon heterojunction solar cells with dopant-free carrier-selective contacts

Stable Dopant-Free Electron-Selective Contact for Silicon Solar Cells

Chromium Trioxide Hole-Selective Heterocontacts for Silicon Solar Cells

Laser Doping Selective Emitter with Thin Borosilicate Glass Layer for N-Type TOPCon C-Si Solar Cells

Highly Efficient and Highly Flexible Thin Crystalline Silicon Heterojunction Solar Cells Based on Dopant-Free Carrier-Selective Contacts Fabricated with Simple Processes

Laser Doping Selective Emitter with Thin Borosilicate Glass Layer for N-Type Topcon Solar Cells

A High-Quality Dopant-Free Electron-Selective Passivating Contact Made from Ultra-Low Concentration Water Solution

A Polymer/Carbon‐Nanotube Ink as a Boron‐Dopant/Inorganic‐Passivation Free Carrier Selective Contact for Silicon Solar Cells with over 21% Efficiency

Improved Performance of Silicon Heterojunction Solar Cells Via 3× Three-Step Boron-Doping

Reducing parasitic absorption and recombination losses in silicon solar cells through transition metal doped glass frit

Trade-offs of the opto-electrical properties of a-Si:H solar cells based on MOCVD BZO films.

Three-Step Process for Efficient Solar Cells with Boron-Doped Passivated Contacts

50-Μm Thick Flexible Dopant-Free Interdigitated-Back-contact Silicon Heterojunction Solar Cells with Front MoOx Coatings for Efficient Antireflection and Passivation.

Study of Boron-Doped Zinc Oxide Film Serving As Front Contact with High Haze Used in Amorphous Silicon Thin Film Solar Cells

Superb improvement of boron doping in selective emitter for TOPCon solar cells via boron-doped silicon paste