Abstract:Crystalline silicon (c-Si) solar cells with passivation stacks consisting of a polycrystalline silicon (poly-Si) layer and a thin interfacial silicon dioxide (SiO2) layer show high conversion efficiencies. Since the poly-Si layer in this structure acts as a carrier transport layer, high doping of the poly-Si layer is crucial for high conductivity and the efficient transport of charge carriers from the bulk to a metal contact. In this respect, conventional furnace-based high-temperature doping methods are limited by the solid solubility of the dopants in silicon. This limitation particularly affects p-type doping using boron. Previously, we showed that laser activation overcomes this limitation by melting the poly-Si layer, resulting in an active concentration beyond the solubility limit after crystallization. High electrically active boron concentrations ensure low contact resistivity at the (contact) metal/semiconductor interface and allow for the maskless patterning of the poly-Si layer by providing an etch-stop layer in an alkaline solution. However, the high doping concentration degrades during long high-temperature annealing steps. Here, we performed a test of the stability of such a high doping concentration under thermal stress. The active boron concentration shows only a minor reduction during SiNx:H deposition at a moderate temperature and a fast-firing step at a high temperature and with a short exposure time. However, for an annealing time tanneal = 30 min and an annealing temperature 600 °C ≤ Tanneal≤ 1000 °C, the high conductivity is significantly reduced, whereas a high passivation quality requires annealing in this range. We resolve this dilemma by introducing a second, healing laser reactivation step, which re-establishes the original high conductivity of the boron-doped poly-Si and does not degrade the passivation. After a thermal annealing temperature Tanneal = 985 °C, the reactivated layers show high sheet conductance (Gsh) with Gsh = 24 mS sq and high passivation quality, with the implied open-circuit voltage (iVOC) reaching iVOC = 715 mV. Therefore, our novel three-step process consisting of laser activation, thermal annealing, and laser reactivation/healing is suitable for fabricating highly efficient solar cells with p++-poly-Si/SiO2 contact passivation layers.

Borosiloxane boron diffusion for p-emitter formation on n-type silicon wafers

Empirical optimization and implementation of boron emitter on n-type silicon solar cells using BBR3 liquid source

Presented at the 31st European PV Solar Energy Conference and Exhibition, 14-18 September 2015, Hamburg, Germany OPTIMIZATION OF BBr3 DIFFUSION PROCESSES FOR N-TYPE SILICON SOLAR CELLS

A Novel Processing Technology for High‐Efficiency Silicon Solar Cells

Doping Silicon Wafers with Boron by Use of Silicon Paste

Emitter formation with boron diffusion from PECVD deposited boron-doped silicon oxide for high-efficiency TOPCon solar cells

Boron tube diffusion process parameters for high-efficiency n-TOPCon solar cells with selective boron emitters

Influence of Boron-doping on Electrical Properties of Na-Si:H Thin Film Prepared by PECVD

Tracing the boron diffusion into a textured silicon solar cell by combining boron diffusion simulation with experimental and simulated scanning transmission electron beam induced current

Oxide unlocking electron beam melting to separate boron for impurities co-removal of metallurgical grade silicon

Three-Step Process for Efficient Solar Cells with Boron-Doped Passivated Contacts

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

Electrical and Optical Properties of Boron‐doped Nanocrystalline Silicon Films Deposited by PECVD

N-Type Area of PN Junction Etched in BOE Solution

Phosphorus-diffused polysilicon contacts for solar cells

Light Induced Rapid Thermal Diffusion of Boron Atom in Silicon

Superb improvement of boron doping in selective emitter for TOPCon solar cells via boron-doped silicon paste

Ex situ vapor phase boron doping of silicon nanowires using BBr3

Laser Doping Selective Emitter with Thin Borosilicate Glass Layer for N-Type Topcon Solar Cells

Influence of boron doping profile on emitter and metal contact recombination for n-PERT silicon solar cells

Electron‐Selective Strontium Oxide Contact for Crystalline Silicon Solar Cells with High Fill Factor