Abstract:Doping in Si nanocrystals (Si NCs) is an interesting topic since the doping behaviors in the nanoscale are quite complicated compared with the case in bulk Si. In our present work, we use the first-principles calculation to study Phosphorus (P) or Boron (B) doping in Si NCs with the size of 2-8 nm embedded in SiO2 matrix by taking into account the existence of dangling bonds on the interfacial region. It is found that both P and B impurities tend to stay at the interfacial region to passivate the dangling bonds when the dot size is as small as 2 nm. However, P impurities exhibit the possibility to occupy the inner sites of Si NCs while B impurities are more difficult to be introduced into Si NCs due to the large formation energy. Our detailed study suggests that P or B impurities preferentially stay at the intermediate sites between Si and oxygen to form stable bonding configurations. With increasing the dot size from 2 nm to 8 nm, both P and B impurities can enter into the Si NCs more easily due to the relaxation of stress in the larger-sized Si NCs. Our theoretical results are in good agreement with the experimental observations.

Ex situ vapor phase boron doping of silicon nanowires using BBr3

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

Boron-doped silicon nano-wires

Doping silicon nanocrystals with boron and phosphorus

Crystalline boron oxide nanowires on silicon substrate

Boron- and Phosphorus-Hyperdoped Silicon Nanocrystals

First-Principles Study of 2.2 Nm Silicon Nanocrystals Doped with Boron

Selective etching of n-type silicon in pn junction structure in hydrofluoric acid and its application in silicon nanowire fabrication.

Ligand-Free, Colloidal, and Plasmonic Silicon Nanocrystals Heavily Doped with Boron

Size‐Dependent Structures and Optical Absorption of Boron‐Hyperdoped Silicon Nanocrystals

Boron-Doped Silicon Nanowires Grown by Plasma-Enhanced Chemical Vapor Deposition

Highly Focused Femtosecond Laser Directed Selective Boron Doping in Single SiC Nanowire Device for N-P Conversion

Density Functional Theory Study on the B Doping and B/P Codoping of Si Nanocrystals Embedded in SiO2

Synthesis of Boron and Boride Compounds Nanowire Arrays by Chemical Vapor Deposition

Nanoscale Characterization of Active Doping Concentration in Boron‐Doped Individual Si Nanocrystals

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

N-Type Area of PN Junction Etched in BOE Solution

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

Photoluminescence and Raman Scattering Correlated Study of Boron-Doped Silicon Nanowires

Morphology and diameter controllable synthesis of boron nanowires

Ab Initio Molecular Dynamics Simulation Study on Phosphorus/Boron Co-Doped Si Nanocrystals/SiO2 Core/Shell Structures