Abstract:Boron is a narrow-bandgap (1.56 eV) semiconductor with high melting-point, low-density, large Young's modulus and very high refractive index (3.03) close to silicon. Therefore, boron nanostructures is expected to possess strong visible-light scattering properties. However, photonic and optoelectronic properties of the boron nanostructures are seldom studied until now. In this paper, we have successfully prepared single-crystalline boron nanowire (BNW) arrays with high-density on Si substrate. All the BNWs are found to possess strong light-scattering behaviors in the visible regime. Most of all, the scattered light is found to polarize along the longitudinal direction of the nanowire. They also have excellent second-harmonic generation (SHG) properties under ultrafast laser irradiation. Further optoelectronic measurements show that an individual BNW device exhibits notable photocurrent responses in the visible-light range at ambient conditions, which can be attributed to the strong coupling effect between individual BNW and the visible light. The maximum photoresponsivity of an individual BNW can reach up to 12.12 A W-1 at a voltage of 10 V, and the response time is only 18 ms. Therefore, it unveils that the BNWs have a promising future in visible-light communications and detections.

Photoluminescence and Raman Scattering Correlated Study of Boron-Doped Silicon Nanowires

First-Principles Study of 2.2 Nm Silicon Nanocrystals Doped with Boron

Electroluminescence from Si Nanocrystal/c-Si Heterojunction Light-Emitting Diodes

Room Temperature Photoluminescence Property of Boron-Doped Sol–gel Silica

Comparative study on the localized surface plasmon resonance of boron- and phosphorus-doped silicon nanocrystals.

Electrical and Optical Properties of Boron‐doped Nanocrystalline Silicon Films Deposited by PECVD

Doping silicon nanocrystals with boron and phosphorus

Doping Efficiency, Dopant Location, and Oxidation of Si Nanocrystals

Boron-Doped Silicon Nanowires Grown by Plasma-Enhanced Chemical Vapor Deposition

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

Size‐Dependent Structures and Optical Absorption of Boron‐Hyperdoped Silicon Nanocrystals

1.5 Μm Luminescence of Silicon Nanowires Fabricated by Thermal Evaporation of SiO

Density Functional Theory Study on the B Doping and B/P Codoping of Si Nanocrystals Embedded in SiO2

Lightly boron and phosphorus co-doped silicon nanocrystals

Ligand-Free, Colloidal, and Plasmonic Silicon Nanocrystals Heavily Doped with Boron

Boron- and Phosphorus-Hyperdoped Silicon Nanocrystals

Photoluminescence and Raman Spectroscopy Characterization of Boron- and Nitrogen-Doped 6H Silicon Carbide

Electron-beam-induced current evidence for room-temperature photoluminescence of silicon pn diode

Ab Initio Molecular Dynamics Simulation Study on Phosphorus/Boron Co-Doped Si Nanocrystals/SiO2 Core/Shell Structures

Tetragonal Single-Crystalline Boron Nanowires with Strong Anisotropic Light Scattering Behaviors and Photocurrent Response in Visible-Light Regime.

Synthesis and Raman Spectra of Si-Nanowires