Abstract:An ex situ vapor phase technique for doping vapor-liquid-solid grown silicon nanowires (NWs) based on the reduction of BBr(3) by H(2) has been demonstrated. Electron microscope images show that the excellent crystal quality of the nanowires is preserved with minimal alteration of their surface morphology. Fano resonance in the Raman spectra for single nanowires indicates that active boron concentrations over two orders of magnitude and as high as 10(20) cm(-3) are achievable in a well-controlled manner, with excellent axial uniformity. Electrical resistance measurements from single nanowires confirm that incorporated boron is electrically active, and doping of epitaxial bridging Si NWs is successfully demonstrated. By avoiding the pitfalls of nonuniform concentration profiles and drastic morphological changes that often accompany in situ boron doping, this technique provides a valuable alternative doping route for the development of single Si NW devices in a reliable manner.

Boron-Doped Silicon Nanowires Grown by Plasma-Enhanced Chemical Vapor Deposition

Ultrafast growth of single-crystalline Si nanowires

Electrical and Optical Properties of Boron‐doped Nanocrystalline Silicon Films Deposited by PECVD

Boron- and Phosphorus-Hyperdoped Silicon Nanocrystals

Photoluminescence and Raman Scattering Correlated Study of Boron-Doped Silicon Nanowires

Doping silicon nanocrystals with boron and phosphorus

Doped Silicon Nanoparticles Synthesized by Nonthermal Plasma

Boron-doped silicon nano-wires

Crystalline boron oxide nanowires on silicon substrate

Morphology and diameter controllable synthesis of boron nanowires

Synthesis of Boron and Boride Compounds Nanowire Arrays by Chemical Vapor Deposition

Growth of Net-Shaped Boron Nitride Nanorods

Doping Silicon Wafers with Boron by Use of Silicon Paste

Ex situ vapor phase boron doping of silicon nanowires using BBr3

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

Doping Efficiency, Dopant Location, and Oxidation of Si Nanocrystals

Nonthermal Plasma Synthesized Boron-Doped Germanium Nanocrystals

Silicon Nanowire Synthesis by Chemical Vapor Deposition

Influence of Boron-doping on Electrical Properties of Na-Si:H Thin Film Prepared by PECVD

Density Functional Theory Study on the B Doping and B/P Codoping of Si Nanocrystals Embedded in SiO2

Freestanding doped silicon nanocrystals synthesized by plasma