Growth of Net-Shaped Boron Nitride Nanorods

卢晓敏,汪雷,杨德仁
DOI: https://doi.org/10.3969/j.issn.1672-7126.2004.06.013
2004-01-01
Abstract:Boron nitride (BN) nanorods, grown on silicon substrate by plasma enhanced chemical vapor deposition (PECVD), were characterized with scanning electron microscopy (SEM), energy dispersive spectrum (EDS) and Fourier transform infrared spectroscopy (FTIR). The results show that under favorable conditions the BN nanorods, interconnected in an irregular net-shape, can be synthesized with diameters ranging from several tens to hundreds of nm and a length of a few μm. The growth mechanism(s) is also discussed.
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