Silicon nano-wires grown at low temperature
Junjie Niu,Jian Sha,Lei Wang,Yujie Ji,Deren Yang
DOI: https://doi.org/10.1016/j.physe.2004.12.014
2005-01-01
Physica E: Low-Dimensional Systems and Nanostructures
Abstract:Quantities of crystalline array-orderly silicon nano-wires (SiNWs) were fabricated using chemical-vapor-deposition (CVD) method at low temperature (550–400°C). In the experiments, the decreasing temperature process was used. By means of transmission electron spectroscopy, X-ray diffraction and Raman spectroscopy, it was found that the SiNWs were well crystallized. Finally, the growth mechanism of the SiNWs during the decreasing process was discussed.