Silicon Doped Boron Carbide Nanorod Growth Via a Solid-Liquid-solid Process

WQ Han
DOI: https://doi.org/10.1063/1.2190468
IF: 4
2006-01-01
Applied Physics Letters
Abstract:Here we report the synthesis of silicon doped boron carbide (Si-doped B4C) nanorods via a solid reaction using activated carbon, boron, and silicon powder as reactants. These nanorods have been studied by high-resolution transmission electron microscopy, scanning electron microscopy, electron energy loss spectroscopy, and energy-dispersive x-ray spectrometry. The diameter of Si-doped B4C nanorods ranges from 15to70nm. The length of Si-doped B4C nanorods is up to 30μm. NixCoyBz nanoparticles are used as catalysts for the growth of Si-doped B4C nanorods. A solid-liquid-solid growth mechanism is proposed.
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