Abstract:The excitation power and temperature dependences of photoluminescence (PL) emission in 6H polytype of silicon carbide are investigated extensively. A sublinear power-function dependence of the donor-acceptor pair emission intensity on the excitation power is explained by a rate-equation model. A very low power exponent (k = 0.3) in a power-law dependence of PL intensity on the excitation power of B-N codoped 6H-SiC at room temperature indicates that three-particle Auger recombination is the main carrier recombination pathway. Auger recombination in an Al-N codoped SiC does not manifest as strongly as that of the B-N codoped sample due to high density of ionized impurities which capture the nonequilibrium carriers faster. The ionized impurities form localized potential wells due to their random distribution, which is revealed by a blue shift of the PL band with increasing excitation intensity (approximately 16 meV per decade) and with decreasing temperature. Low-temperature Hall-effect measurement of the Al-N codoped sample confirms the high density of ionized impurities and significantly reduced ionization energy of dopant states by approximately 53 meV due to the high dopant densities. These results could lead to realization of tunable SiC-based light sources in severe operating conditions.

Photoluminescence and Raman Spectroscopy Characterization of Boron- and Nitrogen-Doped 6H Silicon Carbide

Donor-acceptor-pair Emission Characterization in N-B Doped Fluorescent SiC

Electroluminescence from Si Nanocrystal/c-Si Heterojunction Light-Emitting Diodes

Nmr Spin Lattice Relaxation in Nitrogen-Doped 6h Silicon Carbide

Characterization of Donor–acceptor-Pair Emission in Fluorescent 6H-Sic

Lateral Boron Distribution in Polycrystalline SiC Source Materials

First-Principles Study of 2.2 Nm Silicon Nanocrystals Doped with Boron

Photoluminescence and Raman Scattering Correlated Study of Boron-Doped Silicon Nanowires

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

Size‐Dependent Structures and Optical Absorption of Boron‐Hyperdoped Silicon Nanocrystals

Lightly boron and phosphorus co-doped silicon nanocrystals

Electrical and Optical Properties of Boron‐doped Nanocrystalline Silicon Films Deposited by PECVD

Dislocation Luminescence in Nitrogen-Doped Czochralski and Float Zone Silicon

Doping silicon nanocrystals with boron and phosphorus

Dependence of Photoluminescence Emission on Excitation Power and Temperature in Highly Doped 6H- SiC

Room-Temperature Near-Infrared Electroluminescence from Boron-Diffused Silicon Pn-Junction Diodes

Doping Efficiency, Dopant Location, and Oxidation of Si Nanocrystals

Effect of nitrogen doping on the dislocation behaviors of 4H-SiC

Photoluminescence and Raman Studies on Boron-Doped Nanocrystalline Si:H Thin Films

Boron- and Phosphorus-Hyperdoped Silicon Nanocrystals

Electroluminescence of Silicon-Rich Silicon Nitride Light-Emitting Devices