Abstract:Scanning electron beam annealing techniques have been applied to the study of diffusion of implanted arsenic and boron difluoride. Electron beam anneals over the time range 0-180s (at Tmax), with peak temperatures in the range 1100-1200°C have been performed on uniformly implanted samples. Controlled slow cooling has been performed for some samples. Direct sample temperature measurements were made using a dual-colour pyrometer under control of a microcomputer, which provided data-logging and feedback control of temperature. The accurate temperature control achieved using this system is important for realistic diffusion modelling. Measurement of the resulting chemical and electrical dopant profiles, using SIMS, RBS and spreading resistance methodshas shown the presence of non-equilibrium diffusion at short times [6]. Channelling RBS studies used to investigate the activation and clustering behaviour of arsenic during the first stages of these very rapid anneals is reported. Modelling of the arsenic diffusion occuring for a range of implant doses subjected to these anneals has been performed,applying avariety of models, including a dynamic clustering model. This dynamic clustering model, based upon an equilibrium cluster model and a measured de-clustering rate, has been shown previously to give good agreementwith experiment. Forthese experiments, a modified de-clustering coefficient was needed to model the diffusion occuring for a wider range of arsenic implants. A solution of the Poisson equation for the internal electric field has also been incorporated. DLTS techniques have been used to study the defects remaining in diodes fabricated using these implagts andanneals. Trap densities of <5×1010cm−3 and leakages of <2×10−9 A.cm2 at −5V have been measured for the best devices, similar tothose observed for control furnace anneals.

Light Induced Rapid Thermal Diffusion of Boron Atom in Silicon

A Study of Diffusion, Clustering and Defects in As+ and Bf2+ Implanted Silicon During Scanning Electron Beam Annealing.

Transient Scanning Electron Beam Annealing Methods Used to Study Diffusion and Defects in Implanted Silicon

Subnanometer-resolution Depth Profiling of Boron Atoms and Lattice Defects in Silicon Ultrashallow Junctions by Ion Beam Techniques

A Deep Level Transient Spectroscopic Study of Boron-Ion-implanted Single Quantum Wells

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

BORON DIFFUSION IN B-DOPED A-Sic:H/undoped A-Si:H HETEROJUNCTIONS

Simulation of interstitial diffusion of ion-implanted boron

Investigation of Microstructure and Photoelectric Properties of Boron- Doped Amorphous Silicon Films

First-Principles Study of 2.2 Nm Silicon Nanocrystals Doped with Boron

Change in the microscopic diffusion mechanisms of boron implanted into silicon with increase in the annealing temperature

Simulation of Boron Diffusion during Annealing of Silicon Substrates Undergone a High Fluence Ion Implantation

Tracing the boron diffusion into a textured silicon solar cell by combining boron diffusion simulation with experimental and simulated scanning transmission electron beam induced current

Boron Ultrashallow Junction Formation in Silicon by Low‐Energy Implantation and Rapid Thermal Annealing in Inert and Oxidizing Ambient

Comparison of Thai's theory with experimental boron doping profiles in silicon, diffused from boron nitride sources

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Light-Induced Degradation in N-Type Czochralski Silicon by Boron-Doping and Thermal Donor Compensation

Near-infrared and Mid-infrared Light Emission of Boron-doped Crystalline Silicon

Suppression of Interfacial Boron Accumulation and Defect Density in Molecular Beam Epitaxial Silicon

Borosiloxane boron diffusion for p-emitter formation on n-type silicon wafers

The Role of Point Defects in Anomalous Diffusion of Implanted Boron in Silicon