Abstract:Scanning electron beam annealing techniques have been applied to the study of diffusion of implanted arsenic and boron difluoride. Electron beam anneals over the time range 0-180s (at Tmax), with peak temperatures in the range 1100-1200°C have been performed on uniformly implanted samples. Controlled slow cooling has been performed for some samples. Direct sample temperature measurements were made using a dual-colour pyrometer under control of a microcomputer, which provided data-logging and feedback control of temperature. The accurate temperature control achieved using this system is important for realistic diffusion modelling. Measurement of the resulting chemical and electrical dopant profiles, using SIMS, RBS and spreading resistance methodshas shown the presence of non-equilibrium diffusion at short times [6]. Channelling RBS studies used to investigate the activation and clustering behaviour of arsenic during the first stages of these very rapid anneals is reported. Modelling of the arsenic diffusion occuring for a range of implant doses subjected to these anneals has been performed,applying avariety of models, including a dynamic clustering model. This dynamic clustering model, based upon an equilibrium cluster model and a measured de-clustering rate, has been shown previously to give good agreementwith experiment. Forthese experiments, a modified de-clustering coefficient was needed to model the diffusion occuring for a wider range of arsenic implants. A solution of the Poisson equation for the internal electric field has also been incorporated. DLTS techniques have been used to study the defects remaining in diodes fabricated using these implagts andanneals. Trap densities of <5×1010cm−3 and leakages of <2×10−9 A.cm2 at −5V have been measured for the best devices, similar tothose observed for control furnace anneals.

Comparison of Thai's theory with experimental boron doping profiles in silicon, diffused from boron nitride sources

A Monte Carlo Study of the Kickout Mechanism of Boron Diffusion in Silicon

First-Principles Study of 2.2 Nm Silicon Nanocrystals Doped with Boron

Light Induced Rapid Thermal Diffusion of Boron Atom in Silicon

A Study of Diffusion, Clustering and Defects in As+ and Bf2+ Implanted Silicon During Scanning Electron Beam Annealing.

Growth and Characterization of Boron Delta-Function Shaped Doping Layer in Silicon by Molecular Beam Epitaxy

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

Doping silicon nanocrystals with boron and phosphorus

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

Experimental characterization of two‐dimensional dopant profiles in silicon using chemical staining

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

The Effect of Doping on the Lattice Parameter and Properties of Cubic Boron Nitride

Carbon Doping Effects on the Electronic Structure of Boron Nitride

Density Functional Theory Study on the B Doping and B/P Codoping of Si Nanocrystals Embedded in SiO2

Influence of Boron-doping on Electrical Properties of Na-Si:H Thin Film Prepared by PECVD

Electronic structure of boron and aluminum $δ$-doped layers in silicon

Absence of boron aggregates in superconducting silicon confirmed by atom probe tomography

Simulation of interstitial diffusion of ion-implanted boron

Atomistic simulation of boron diffusion with charged defects and diffusivity in strained Si/SiGe

Evidence of boron pairs in highly boron laser doped silicon

Doping dependence of boron–hydrogen dynamics in crystalline silicon