Abstract:The performance of strained silicon as the channel material for transistors has plateaued. Motivated by increasing charge-carrier mobility within the device channel to improve transistor performance, germanium (Ge) is considered as an attractive option as a silicon replacement due to its highest p-type mobility in all of the known semiconductor materials and being compatible with today's conventional CMOS manufacturing process. However, the intrinsically high carrier mobility of Ge becomes significantly degraded because Ge's native oxide is unstable and readily decomposes into several GexOy suboxides with a high density of dangling bonds at the surface. In addition, these interface trap states will also degrade the off-state leakage current and subthreshold turn-off of a Ge-based device, significantly affecting its stability. Furthermore, obtaining low-resistance Ohmic contacts to n-type Ge is another key challenge in developing Ge CMOS. To solve these challenges, extensive efforts have been made about the incorporation of new materials, such as Al2O3, SiN3, TiO2, ZnO, Ge3N4, MgO, HfO2, SrTiO3, and Y2O3, into Ge transistors. Controlling the diffusion of foreign atoms into Ge is therefore a critical issue in developing Ge transistors regarding that foreign impurities may be detrimental to devices. In this work, we study the diffusion properties of all common elements in Ge by performing the first-principle calculations with a nudged elastic band method. We find some large atoms, such as Cu, Au, Pd, etc., have a very small diffusion barrier. We reveal the underlying mechanism in a combination of local distortion induced by size effect and bonding effect that controls the diffusion behaviors of different atoms in Ge. This comprehensive study and relatively in-depth understanding of diffusion in Ge provides us with a practical guide for utilizing it more efficiently in semiconductor devices.

Atomistic simulation of boron diffusion with charged defects and diffusivity in strained Si/SiGe

Atomistic Investigations of Single-Crystal Silicon with Pre-Existing Defects

A Monte Carlo Study of the Kickout Mechanism of Boron Diffusion in Silicon

Strain and Electrical Characterization of Boron-Doped Sigec Layers Grown by Chemical Vapor Deposition

Different Strain Relaxation Mechanisms in Strained Si/Si1−xGex/Si Heterostructures by High Dose B+ and BF2+ Doping

Simulation of interstitial diffusion of ion-implanted boron

The Role of Point Defects in Anomalous Diffusion of Implanted Boron in Silicon

Atomic mechanisms of fast diffusion of large atoms in Germanium

Ab Initio Molecular Dynamics Simulation Study on Phosphorus/Boron Co-Doped Si Nanocrystals/SiO2 Core/Shell Structures

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

Simulating Enhanced Diffusion and Activation of Boron by Atomistic Model

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

A Study of Diffusion, Clustering and Defects in As+ and Bf2+ Implanted Silicon During Scanning Electron Beam Annealing.

Strain Engineering for Germanium-on-Insulator Mobility Enhancement with Phase Change Liner Stressors*

Electron effective mobility in strained Si/Si1-xGex MOS devices using Monte Carlo simulation

On the solubility and diffusivity of the intrinsic point defects in germanium

Structural study of crystalline and amorphous phases of Si0.65Ge0.35B (x = 0, 0.01, 0.05, 0.10) alloy prepared by long-time mechanical alloying

Monte Carlo Simulation of Electron Mobility in Strained Si Dg-Fets with Tb Bandstructure Calculation

Tracing the boron diffusion into a textured silicon solar cell by combining boron diffusion simulation with experimental and simulated scanning transmission electron beam induced current

Strengthening boron carbide by doping Si into grain boundaries

Evaluation of the chemical states and electrical activation of ultra-highly B-doped Si 1-x Ge x by ion implantation and subsequent nanosecond laser annealing