Abstract:Scanning electron beam annealing techniques have been applied to the study of diffusion of implanted arsenic and boron difluoride. Electron beam anneals over the time range 0-180s (at Tmax), with peak temperatures in the range 1100-1200°C have been performed on uniformly implanted samples. Controlled slow cooling has been performed for some samples. Direct sample temperature measurements were made using a dual-colour pyrometer under control of a microcomputer, which provided data-logging and feedback control of temperature. The accurate temperature control achieved using this system is important for realistic diffusion modelling. Measurement of the resulting chemical and electrical dopant profiles, using SIMS, RBS and spreading resistance methodshas shown the presence of non-equilibrium diffusion at short times [6]. Channelling RBS studies used to investigate the activation and clustering behaviour of arsenic during the first stages of these very rapid anneals is reported. Modelling of the arsenic diffusion occuring for a range of implant doses subjected to these anneals has been performed,applying avariety of models, including a dynamic clustering model. This dynamic clustering model, based upon an equilibrium cluster model and a measured de-clustering rate, has been shown previously to give good agreementwith experiment. Forthese experiments, a modified de-clustering coefficient was needed to model the diffusion occuring for a wider range of arsenic implants. A solution of the Poisson equation for the internal electric field has also been incorporated. DLTS techniques have been used to study the defects remaining in diodes fabricated using these implagts andanneals. Trap densities of <5×1010cm−3 and leakages of <2×10−9 A.cm2 at −5V have been measured for the best devices, similar tothose observed for control furnace anneals.

The Role of Point Defects in Anomalous Diffusion of Implanted Boron in Silicon

Point Defect Engineering and Its Application in Shallow Junction Formation

A Study of Diffusion, Clustering and Defects in As+ and Bf2+ Implanted Silicon During Scanning Electron Beam Annealing.

Evolution of secondary defects in arsenic implanted Si

Investigation of interaction between defects in Si by means of monitoring point defect fluxes

Atomistic simulation of boron diffusion with charged defects and diffusivity in strained Si/SiGe

Study of point defect detectors in Si

Transient Scanning Electron Beam Annealing Methods Used to Study Diffusion and Defects in Implanted Silicon

J un 2 01 9 Ultraslow Dynamic Annealing of Neutron-induced Defects in n-type Silicon

The Role of Surface Annihilation in Annealing Investigated by Atomic Model Simulation

Simulation of interstitial diffusion of ion-implanted boron

A Monte Carlo Study of the Kickout Mechanism of Boron Diffusion in Silicon

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

Extended Defects in Nitrogen-Doped Czochralski Silicon During Diode Process

Light Induced Rapid Thermal Diffusion of Boron Atom in Silicon

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

Investigation of the Doping Failure Induced by Db in the Sinws Using First Principles Method

Recognition and Imaging of Point Defect Diffusion, Recombination, and Reaction During Growth of Czochralski-Silicon Crystals

Transmission Electron Microscopy Investigation of the Micro-Defects in Czochralski Silicon

Microscopic mechanism responsible for radiation-enhanced diffusion of impurity atoms

Grown-In Defects in Heavily Boron-Doped Czochralski Silicon