Abstract:Scanning electron beam annealing techniques have been applied to the study of diffusion of implanted arsenic and boron difluoride. Electron beam anneals over the time range 0-180s (at Tmax), with peak temperatures in the range 1100-1200°C have been performed on uniformly implanted samples. Controlled slow cooling has been performed for some samples. Direct sample temperature measurements were made using a dual-colour pyrometer under control of a microcomputer, which provided data-logging and feedback control of temperature. The accurate temperature control achieved using this system is important for realistic diffusion modelling. Measurement of the resulting chemical and electrical dopant profiles, using SIMS, RBS and spreading resistance methodshas shown the presence of non-equilibrium diffusion at short times [6]. Channelling RBS studies used to investigate the activation and clustering behaviour of arsenic during the first stages of these very rapid anneals is reported. Modelling of the arsenic diffusion occuring for a range of implant doses subjected to these anneals has been performed,applying avariety of models, including a dynamic clustering model. This dynamic clustering model, based upon an equilibrium cluster model and a measured de-clustering rate, has been shown previously to give good agreementwith experiment. Forthese experiments, a modified de-clustering coefficient was needed to model the diffusion occuring for a wider range of arsenic implants. A solution of the Poisson equation for the internal electric field has also been incorporated. DLTS techniques have been used to study the defects remaining in diodes fabricated using these implagts andanneals. Trap densities of <5×1010cm−3 and leakages of <2×10−9 A.cm2 at −5V have been measured for the best devices, similar tothose observed for control furnace anneals.

Study of point defect detectors in Si

Investigation of interaction between defects in Si by means of monitoring point defect fluxes

Transient Scanning Electron Beam Annealing Methods Used to Study Diffusion and Defects in Implanted Silicon

A Study of Diffusion, Clustering and Defects in As+ and Bf2+ Implanted Silicon During Scanning Electron Beam Annealing.

Evolution of secondary defects in arsenic implanted Si

Point Defect Engineering and Its Application in Shallow Junction Formation

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

The Role of Point Defects in Anomalous Diffusion of Implanted Boron in Silicon

Scanning Infrared Microscopy Study of Thermal Processing Induced Defects in Low Resistivity Si Wafers

Study of Irradiation Induced Changes of Electrical and Functional Characteristics in Ge Doped Si Diodes

A Study of Electron Irradiation-Induced Defects in Si Layers

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Defect Property in He+ Implanted Silicon Probed by Slow Positron Beam

Density Functional Theory Study on the B Doping and B/P Codoping of Si Nanocrystals Embedded in SiO2

Investigation of the Boron removal effect induced by 5.5 MeV electrons on highly doped EPI- and Cz-silicon

A Deep Level Transient Spectroscopic Study of Boron-Ion-implanted Single Quantum Wells

Recognition and Imaging of Point Defect Diffusion, Recombination, and Reaction During Growth of Czochralski-Silicon Crystals

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Electron-beam-induced Current Study of Grain Boundaries in Multicrystalline Si

Suppression of Interfacial Boron Accumulation and Defect Density in Molecular Beam Epitaxial Silicon

Research on the Evolution of Defects Initiation and the Diffusion of Dopant on the Si/SiO2 Interface