Abstract:Scanning electron beam annealing techniques have been applied to the study of diffusion of implanted arsenic and boron difluoride. Electron beam anneals over the time range 0-180s (at Tmax), with peak temperatures in the range 1100-1200°C have been performed on uniformly implanted samples. Controlled slow cooling has been performed for some samples. Direct sample temperature measurements were made using a dual-colour pyrometer under control of a microcomputer, which provided data-logging and feedback control of temperature. The accurate temperature control achieved using this system is important for realistic diffusion modelling. Measurement of the resulting chemical and electrical dopant profiles, using SIMS, RBS and spreading resistance methodshas shown the presence of non-equilibrium diffusion at short times [6]. Channelling RBS studies used to investigate the activation and clustering behaviour of arsenic during the first stages of these very rapid anneals is reported. Modelling of the arsenic diffusion occuring for a range of implant doses subjected to these anneals has been performed,applying avariety of models, including a dynamic clustering model. This dynamic clustering model, based upon an equilibrium cluster model and a measured de-clustering rate, has been shown previously to give good agreementwith experiment. Forthese experiments, a modified de-clustering coefficient was needed to model the diffusion occuring for a wider range of arsenic implants. A solution of the Poisson equation for the internal electric field has also been incorporated. DLTS techniques have been used to study the defects remaining in diodes fabricated using these implagts andanneals. Trap densities of <5×1010cm−3 and leakages of <2×10−9 A.cm2 at −5V have been measured for the best devices, similar tothose observed for control furnace anneals.

A Deep Level Transient Spectroscopic Study of Boron-Ion-implanted Single Quantum Wells

Interfacial Defects In Si1-Xgex/Si Quantum-Wells Detected By Deep-Level Transient Spectroscopy

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport

Evolution of secondary defects in arsenic implanted Si

Defect-Related Electroluminescence in the 1.2–1.7 Μm Range from Boron-Implanted Silicon at Room Temperature

Light Induced Rapid Thermal Diffusion of Boron Atom in Silicon

A Study of Diffusion, Clustering and Defects in As+ and Bf2+ Implanted Silicon During Scanning Electron Beam Annealing.

Different Strain Relaxation Mechanisms in Strained Si/Si1−xGex/Si Heterostructures by High Dose B+ and BF2+ Doping

Suppression of Interfacial Boron Accumulation and Defect Density in Molecular Beam Epitaxial Silicon

Deep-Level Transient Spectroscopy Study On Direct Silicon Bonded (110)/(100) Interfacial Grain Boundary

Transient Scanning Electron Beam Annealing Methods Used to Study Diffusion and Defects in Implanted Silicon

Ultrashallow Heavily Constrained Quantum Wells: the Cradle for Fully Electrically Controlled and Microwave Coupled Quantum Bits

Grown-In Defects in Heavily Boron-Doped Czochralski Silicon

Si+ ION IMPLANTATION INFLUENCE ON PHOTOLUMINESCENCE IN Si1-xGex/Si QUANTUM WELLS GROWN BY MOLECULAR BEAM EPITAXY

Characterization of deep-level defects in highly-doped silicon with asymmetric structure by transient capacitance spectroscopy

Deep-level Transient Spectroscopy Study on Direct Silicon Bonded (1 1 0)/(1 0 0) Interfacial Grain Boundary

Study of point defect detectors in Si

The evolution of defects in n-type 4H-SiC Schottky barrier diode irradiated with swift heavy ion using the Deep Level Transient Spectroscopy

Space Distribution of Deep Levels in SiGe/Si Heterostructure

Interfacial Defects Related to the Substrate Treatment in Molecular Beam Epitaxial Silicon