Abstract:As device dimensions are being scaled to their ultimate limits, channel mobility engineering seems to offer one of the best prospects of improved performance of metal oxide semiconductor field effect transistors (MOSFETs). In fact, new materials, such as Ge, with higher effective mobilities of electrons (2times) and holes (4times) than in Si are already being explored to increase the drive currents in MOSFETs. In addition, by straining the Ge channels, it is possible to further increase the mobilities of the holes. However, how this advantage in mobility translates to improved drive current in the short-channel length MOSFETs is not completely clear. For example, in the ballistic limit, it is thermal velocity that matters (Lundstrom, 1997) and these are comparable for Si and Ge. Although, there have been reports from some experimental and theoretical (in the ballistic limit) studies of the mobility and drive current enhancements of unstrained and strained Ge channel MOSFETs over Si MOSFETs, no Monte Carlo simulation taking into account full band structure, scattering, non local field effects, etc., has so far been been performed. The aim of this work was to perform a full band Monte Carlo simulation study of unstrained Ge bulk N- and P- MOSFETs and strained Ge bulk PMOSFETs and compare with their Si counterparts. Since biaxial strain along the (100) plane in Ge does not break the degeneracy of the conduction band L valleys of Ge, we have not considered strained Ge NMOSFETs

Monte Carlo Simulation of Electron Mobility in Strained Si Dg-Fets with Tb Bandstructure Calculation

Strain Optimization in Silicon P-Type Double-Gate MOSFET at 7nm Channel Length

Electron effective mobility in strained Si/Si1-xGex MOS devices using Monte Carlo simulation

MC simulation of strained-Si MOSFET with full-band structure and quantum correction

Monte Carlo Study of Germanium N- and P- MOSFETs

Analytical Electron-Mobility Model for Arbitrarily Stressed Silicon

Conduction band structure and electron mobility in uniaxially strained Si via externally applied strain in nanomembranes

Device Simulation of Nano-Scale MOSFETs Based on Bandstructure Calculation

K·p and Monte Carlo Studies of Hole Mobility in Strained-Si Pmos Inversion Layers

A Universal Electron Mobility Model of Strained Si MOSFETs Based on Variational Wave Functions

Electron Mobility Enhancement Characteristics and Its Temperature Dependence in Strained-Si n-MOSFETs

Low-field hole mobility model of strained Si1-xGex pMOSFET

Monte Carlo study of apparent mobility reduction in nano-MOSFETs

3-D Monte Carlo Simulation of the Impact of Quantum Confinement Scattering on the Magnitude of Current Fluctuations in Double Gate MOSFETs

Monte Carlo Simulations of Spin Transport in a Strained Nanoscale InGaAs Field Effect Transistor

An Analytic Model for Electron Mobility in Strained Si/Si1-xGex Nmosfets

Multiphysics Simulation of Self-Heating-Induced Thermal Stress Effects on Quantum Transport in Gate-All-Around Nanosheet Field Effect Transistors

High field transport in strained Si/GeSi double heterostructure: a Fokker-Planck approach

Mobility Enhancement of Strained GaSb P-Channel Metal Oxide Semiconductor Field-Effect Transistors with Biaxial Compressive Strain

Monte Carlo Simulation of Band-to-band Tunneling in Silicon Devices

Hole Mobility and Thermal Velocity Enhancement for Uniaxial Stress in Si Up to 4 GPa